Sökning: "metallic contacts"

Visar resultat 1 - 5 av 19 avhandlingar innehållade orden metallic contacts.

1. 1. Tailoring of Contacts on Silicon Carbide - Procedures and Mechanisms

   Författare :S. A. Perez-Garcia; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; interfacial reaction; metallic contacts; Silicon carbide; silicides; XPS.;

   Sammanfattning : Silicon carbide (SiC) exhibits very good electrical, thermal, chemical and mechanical properties which make it suitable for the next generation of wide band gap electronic devices, where silicon (Si) cannot be used due to its limitations with respect to the mentioned properties. Nickel (Ni) and Tantalum (Ta) are among the metals used for the contact formation. LÄS MER

3. 2. Integration of metallic source/drain contacts in MOSFET technology

   Författare :Jun Luo; Mikael Östling; Shi-Li Zhang; Anthony O'Neill; KTH; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; CMOS technology; MOSFET; Schottky barrier MOSFET; metallic source drain; contact resistivity; NiSi; PtSi; SALICIDE; ultrathin silicide; FinFET; Semiconductor physics; Halvledarfysik;

   Sammanfattning : The continuous and aggressive downscaling of conventional CMOS devices has been driving the vast growth of ICs over the last few decades. As the CMOS downscaling approaches the fundamental limits, novel device architectures such as metallic source/drain Schottky barrier MOSFET (SB-MOSFET) and SB-FinFET are probably needed to further push the ultimate downscaling. LÄS MER

4. 3. Fabrication, characterization, and modeling of metallic source/drain MOSFETs

   Författare :Valur Gudmundsson; Per-Erik Hellström; Yee-Chia Yeo; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Metallic source drain; contact resistivity; Monte Carlo; NiSi; PtSi; SOI; UTB; tri-gate; FinFET; multiple-gate; nanowire; MOSFET; CMOS; Schottky barrier; silicide; SALICIDE;

   Sammanfattning : As scaling of CMOS technology continues, the control of parasitic source/drain (S/D) resistance (RSD) is becoming increasingly challenging. In order to control RSD, metallic source/drain MOSFETs have attracted significant attention, due to their low resistivity, abrupt junction and low temperature processing (≤700 °C). LÄS MER

5. 4. Thermally stable electrical contacts to 6H silicon carbide

   Författare :Nils Lundberg; Mikael Östling; Claude Jaussaud; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; I-V current -voltage ; C-V capacitance-voltage ; rectifying; ohmic; interface; silicide; carbide; epilayer; Schottky barrier height; current rectification ratio CRR ; specific contact resistivity; transmission line model TLM ; contact resistance; transfer length; Electrical Engineering; Elektro- och systemteknik;

   Sammanfattning : Silicon Carbide (SiC) are at present being developed for use in high temperature (≥ 500◦C) and high-power environments under which conventional semiconductors can hardly perform.  Thermally stable electrical contacts are essential to the ability of SiC to function under such extreme conditions. LÄS MER

7. 5. The behaviour of antiwear additives in lubricated rolling-sliding contacts

   Författare :Aldara Naveira Suarez; Nicholas D. Spencer; Luleå tekniska universitet; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Maskinelement; Machine Elements;

   Sammanfattning : Traditionally rolling contact fatigue observed in bearing field applications was subsurface initiated. However, despite an improvement in the properties of steel, some factors such as downsizing in bearing design, extreme loading of bearings as well as demanding application conditions (start-stop cycles) have led to an increase in cases of surface damage related to surface initiated fatigue, which essentially comes from surface distress. LÄS MER