Sökning: "metallic contacts"

Visar resultat 1 - 5 av 16 avhandlingar innehållade orden metallic contacts.

  1. 1. Tailoring of Contacts on Silicon Carbide - Procedures and Mechanisms

    Författare :S. A. Perez-Garcia; [2007]
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; interfacial reaction; metallic contacts; Silicon carbide; silicides; XPS.;

    Sammanfattning : Silicon carbide (SiC) exhibits very good electrical, thermal, chemical and mechanical properties which make it suitable for the next generation of wide band gap electronic devices, where silicon (Si) cannot be used due to its limitations with respect to the mentioned properties. Nickel (Ni) and Tantalum (Ta) are among the metals used for the contact formation. LÄS MER

  2. 2. Integration of metallic source/drain contacts in MOSFET technology

    Detta är en avhandling från Stockholm : KTH

    Författare :Jun Luo; KTH.; [2010]
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; CMOS technology; MOSFET; Schottky barrier MOSFET; metallic source drain; contact resistivity; NiSi; PtSi; SALICIDE; ultrathin silicide; FinFET; NATURAL SCIENCES Physics Condensed matter physics Semiconductor physics; NATURVETENSKAP Fysik Kondenserade materiens fysik Halvledarfysik;

    Sammanfattning : The continuous and aggressive downscaling of conventional CMOS devices has been driving the vast growth of ICs over the last few decades. As the CMOS downscaling approaches the fundamental limits, novel device architectures such as metallic source/drain Schottky barrier MOSFET (SB-MOSFET) and SB-FinFET are probably needed to further push the ultimate downscaling. LÄS MER

  3. 3. Fabrication, characterization, and modeling of metallic source/drain MOSFETs

    Detta är en avhandling från Stockholm : KTH Royal Institute of Technology

    Författare :Valur Gudmundsson; KTH.; [2011]
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Metallic source drain; contact resistivity; Monte Carlo; NiSi; PtSi; SOI; UTB; tri-gate; FinFET; multiple-gate; nanowire; MOSFET; CMOS; Schottky barrier; silicide; SALICIDE;

    Sammanfattning : As scaling of CMOS technology continues, the control of parasitic source/drain (S/D) resistance (RSD) is becoming increasingly challenging. In order to control RSD, metallic source/drain MOSFETs have attracted significant attention, due to their low resistivity, abrupt junction and low temperature processing (≤700 °C). LÄS MER

  4. 4. The behaviour of antiwear additives in lubricated rolling-sliding contacts

    Detta är en avhandling från Luleå : Luleå tekniska universitet

    Författare :Aldara Naveira Suarez; Luleå tekniska universitet.; [2011]
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Maskinelement; Machine Elements;

    Sammanfattning : Traditionally rolling contact fatigue observed in bearing field applications was subsurface initiated. However, despite an improvement in the properties of steel, some factors such as downsizing in bearing design, extreme loading of bearings as well as demanding application conditions (start-stop cycles) have led to an increase in cases of surface damage related to surface initiated fatigue, which essentially comes from surface distress. LÄS MER

  5. 5. Novel Layered and 2D Materials for Functionality Enhancement of Contacts and Gas Sensors

    Detta är en avhandling från Linköping : Linköping University Electronic Press

    Författare :Hossein Fashandi; Linköpings universitet.; Linköpings universitet.; [2016]
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; NATURVETENSKAP; NATURAL SCIENCES; NATURVETENSKAP; NATURAL SCIENCES; NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY;

    Sammanfattning : Chemical gas sensors are widely-used electronic devices for detecting or measuring the density levels of desired gas species. In this study, materials with established or potential applications for gas sensors are treated. LÄS MER