Sökning: "metal-oxide-semiconductor capacitors"
Visar resultat 1 - 5 av 13 avhandlingar innehållade orden metal-oxide-semiconductor capacitors.
1. Detection and removal of traps at the SiO2/SiC interface
Sammanfattning : The interface between silicon dioxide (SiO2) and silicon carbide (SiC) is at the heart of the SiC metal-oxide-semiconductor field-effect (MOSFET) transistor. The technology to produce a high quality SiO2/SiC interface does not exist today, hampering further development of the SiC MOSFET. LÄS MER
2. Deposition of high quality thin dielectrics on silicon
Sammanfattning : .... LÄS MER
3. Carbon nanomaterial-based interconnects, integrated capacitors and supercapacitors
Sammanfattning : The constant miniaturization and steady performance improvement of electronics devices have generated innovative ideas such as internet of thing (IoT), which also includes devices with integrated energy sources. The high performance is conceived by the high density of the devices on a chip leading to a high density of interconnects, to connect these devices to outside world. LÄS MER
4. SiC CMOS and memory devices for high-temperature integrated circuits
Sammanfattning : High-temperature electronics find use in extreme environments, like data logging in downhole drilling for geothermal energy production, inside of high-temperature turbines, industrial gas sensors and space electronics. The simplest systems use a sensor and a transmitter, but more advance electronic systems would additionally require a microcontroller with memory. LÄS MER
5. Vertical III-V/High-k Nanowire MOS Capacitors and Transistors
Sammanfattning : The emerging nanowire technology in recent years has attracted an increasing interest for high-speed, low-power electronics due to the possibility of a gate-all-around (GAA) geometry enabling aggressive gate length scaling, together with the ease in incorporating high-mobility narrow band gap III-V semiconductors such as InAs on Si substrates. These benefits make vertical nanowire transistors an attractive alternative to the planar devices. LÄS MER