Sökning: "metal accumulation"
Visar resultat 21 - 25 av 99 avhandlingar innehållade orden metal accumulation.
21. Effects of heavy metal contamination on carbon and nitrogen cycling : An ecological approach to assess risks to soil functions
Sammanfattning : Soil contamination with heavy metals may disrupt soil microorganisms with important roles in carbon (C) and nitrogen (N) cycling. However, there is a lack of understanding on how microorganisms are affected in soil, which may lead to a mismatch when assessing risks of contaminants to field soils. LÄS MER
22. Single-Electron Tunneling Spectroscopy in Magnetic Nanoparticles and Molecular Magnets
Sammanfattning : This thesis deals with single-electron tunneling in transistor-like devices in which the central electrode is either a metal nanoparticle (possibly ferromagnetic) or a molecular magnet. The investigated systems split into two different categories, depending on the size of the central island. LÄS MER
23. Electronic structure of clean and adsorbate-covered InAs surfaces
Sammanfattning : This thesis is the result of investigations regarding the processes in InAs III-V semiconductor surfaces induced by additional charge incorporated by adsorbates. The aim of the project is to study the development of the accumulation layer on the metal/InAs(111)A/B surfaces and its electronic structure. LÄS MER
24. Low-frequency noise characterization, evaluation and modeling of advanced Si- and SiGe-based CMOS transistors
Sammanfattning : A wide variety of novel complementary-metal-oxide-semiconductor (CMOS) devices that are strong contenders for future high-speed and low-noise RF circuits have been evaluated by means of static electrical measurements and low-frequency noise characterizations in this thesis. These novel field-effect transistors (FETs) include (i) compressively strained SiGe channel pMOSFETs, (ii) tensile strained Si nMOSFETs, (iii) MOSFETs with high-k gate dielectrics, (iv) metal gate and (v) silicon-on-insulator (SOI) devices. LÄS MER
25. Ultrathin Oxides in Metal-Oxide-Silicon Structures: Defects and Characterization
Sammanfattning : The properties of metal-oxide-silicon (MOS) structures with ultrathin oxide layers (15-30 Å) have been investigated by means of electrical characterization. The characterization methods used were mainly capacitance voltage (C-V), current voltage (I-V) and constant voltage stress (I-t) measurements. LÄS MER