Sökning: "low-noise amplifier LNA"
Visar resultat 16 - 20 av 27 avhandlingar innehållade orden low-noise amplifier LNA.
16. Reconfigurable Receiver Front-Ends for Advanced Telecommunication Technologies
Sammanfattning : The exponential growth of converging technologies, including augmented reality, autonomous vehicles, machine-to-machine and machine-to-human interactions, biomedical and environmental sensory systems, and artificial intelligence, is driving the need for robust infrastructural systems capable of handling vast data volumes between end users and service providers. This demand has prompted a significant evolution in wireless communication, with 5G and subsequent generations requiring exponentially improved spectral and energy efficiency compared to their predecessors. LÄS MER
17. Receiver Front-Ends in CMOS with Ultra-Low Power Consumption
Sammanfattning : Historically, research on radio communication has focused on improving range and data rate. In the last decade, however, there has been an increasing demand for low power and low cost radios that can provide connectivity with small devices around us. LÄS MER
18. Integrated Variable-Gain and CMOS Millimeter-Wave Amplifiers
Sammanfattning : Variable Gain Amplifier finds extensive use in the high frequency demonstrators specially those operating in the millimeter-wave regions and beyond where the incoming RF signal level can have wide variations. To maintain a constant signal level an IF VGA has been designed that can offer a dynamic variation of gain as much as 45 dB together with a high maximum gain and a low noise figure. LÄS MER
19. New directions in RF LNA design
Sammanfattning : The RF field develops fast today and to meet the increasing needs from more and more users and higher and higher data rates for mobile terminals the number of wireless standards are rapidly increasing. This has lead to an increased number of frequency spectra dedicated for wireless communication, such as the recent ones for WCDMA, Bluetooth, and WLAN. LÄS MER
20. InP HEMT Technology and Applications
Sammanfattning : Indium phosphide high electron mobility transistors (InGaAs/InAlAs/InP HEMTs) exhibit the highest cut-off frequencies and the lowest microwave noise figures of all transistor technologies. Both InP HEMT technology and associated circuit demonstrators are therefore interesting to explore further. LÄS MER