Sökning: "low-noise amplifier LNA"

Visar resultat 11 - 15 av 27 avhandlingar innehållade orden low-noise amplifier LNA.

1. 11. InP-based heterostructure field effect transistors and millimeter wave integrated circuits

   Författare :Anders Mellberg; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; passive components; InP; MIM capacitor; high electron mobility transistor HEMT ; monolithic microwave integrated circuit MMIC ; CPW; TL; 2DEG; heterostructure field effect transistor HFET ; spiral inductor; modeling; wideband LNA; coplanar waveguides; microstrip transmission line; modulation doped field effect transistor MODFET ; III-V semiconductor; low noise amplifier; compound semiconductor; thin film resistor TFR ; indium phosphide; low noise amplifier;

   Sammanfattning : .... LÄS MER

3. 12. Ultra-Wideband Low-Noise Amplifier andSix-Port Transceiver for High Speed DataTransmission

   Författare :Adriana Serban; Shaofang Gong; Ke Wu; Linköpings universitet; []
   Nyckelord :NATURAL SCIENCES; NATURVETENSKAP;

   Sammanfattning : Today’s data rates in wired networks can reach 100 Gbit/s using optical fiber while data rates in wireless networks are much lower - tens of Mbit/s for 3G mobile communication and 480 Mbit/s for ultra-wideband (UWB) short range wireless communications. This difference in data rates can mainly be explained by the limited allowed frequency spectrum, the nature of the radio signal and the high requirements imposed on all hardware designed for high speed and wideband wireless communications. LÄS MER

4. 13. Cryogenic InP High Electron Mobility Transistors in a Magnetic Field

   Författare :Isabel Harrysson Rodrigues; Chalmers tekniska högskola; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; NATURVETENSKAP; NATURAL SCIENCES; NATURVETENSKAP; NATURAL SCIENCES; magnetic field; cryogenic; low noise amplifier; angular dependence; InP HEMT; geometrical magnetoresistance;

   Sammanfattning : The InGaAs-InAlAs-InP high electron mobility transistor (InP HEMT) is the preferred active device used in a cryogenic low noise amplifier (LNA) for sensitive detection of microwave signals. In this thesis it is demonstrated that the InP HEMT, when placed in a magnetic field, has a strong angular dependence in its output current. LÄS MER

5. 14. Low-Power HEMT LNAs for Quantum Computing

   Författare :Yin Zeng; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; low-noise amplifier; qubit; Cryogenic; InP HEMT.; quantum computing; low-power;

   Sammanfattning : The rapid development of quantum computing technology predicts much more qubits to handle in the detection, readout, and amplification of qubits than in today's system. Due to the limited cooling capability of the dilution refrigerator, the current low-noise amplifiers (LNAs) are in need of ten to hundred times reduced dc power consumption yet with lowest noise temperature at qubit readout frequencies, typcially 4-12 GHz. LÄS MER

7. 15. Design Aspects of Fully Integrated Multiband Multistandard Front-End Receivers

   Författare :Adiseno; KTH; []
   Nyckelord :low-noise amplifier; mixer; RF front-end; wireless receiver; noise figure; linearity; bandwidth; dual-loop feedback;

   Sammanfattning : In this thesis, design aspects of fully integrated multibandmultistandard front-end receivers are investigated based onthree fundamental aspects: noise, linearity and operatingfrequency. System level studies were carried out to investigatethe effects of different modulation techniques, duplexing andmultiple access methods on the noise, linearity and selectivityperformance of the circuit. LÄS MER