Sökning: "low-noise amplification"

Visar resultat 1 - 5 av 11 avhandlingar innehållade orden low-noise amplification.

  1. 1. Ultra-Low Noise InP HEMTs for Cryogenic Amplification

    Författare :Joel Schleeh; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; cryogenic; DC power dissipation; MMIC; LNA; InP HEMT; ALD;

    Sammanfattning : InGaAs/InAlAs/InP High Electron Mobility Transistors (InP HEMTs), are today the best devices to design cryogenic low noise amplifiers. However, reported progress in reducing the noise has been slow in the last decade. LÄS MER

  3. 2. Optical Transmission Systems Based on Phase-Sensitive Amplifiers

    Författare :Samuel L I Olsson; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; optical injection locking; fiber nonlinearities; optical fiber communication; fiber nonlinearity mitigation; four-wave mixing; fiber optic parametric amplification; low-noise amplification; phase-sensitive amplification; fibre optics;

    Sammanfattning : The capacity and reach of today's long-haul fiber optical communication systems is limited by amplifier noise and fiber nonlinearities. Conventional, phase-insensitiveamplifiers (PIAs), have a quantum limited noise figure (NF) of 3 dB at high gain, meaning that with a shot-noise limited input signal the signal-to-noise ratio (SNR)is degraded by at least 3 dB. LÄS MER

  4. 3. Silicon Nanowire Field-Effect Devices as Low-Noise Sensors

    Författare :Xi Chen; Zhen Zhang; Shi-Li Zhang; Si Chen; Fengnian Xia; Uppsala universitet; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon nanowire; field-effect transistor; Schottky junction gate; low frequency noise; ion sensor; Teknisk fysik med inriktning mot elektronik; Engineering Science with specialization in Electronics;

    Sammanfattning : In the past decades, silicon nanowire field-effect transistors (SiNWFETs) have been explored for label-free, highly sensitive, and real-time detections of chemical and biological species. The SiNWFETs are anticipated for sensing analyte at ultralow concentrations, even at single-molecule level, owing to their significantly improved charge sensitivity over large-area FETs. LÄS MER

  5. 4. Nonlinearity mitigation in phase-sensitively amplified optical transmission links

    Författare :Kovendhan Vijayan; Chalmers tekniska högskola; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; copier-PSA; nonlinearity mitigation; phase-sensitive amplifier; self-phase modulation mitigation; low-noise amplification; optical transmission; crossphase modulation mitigation;

    Sammanfattning : The fundamental limitations in fiber-optic communication are caused by optical amplifier noise and the nonlinear response of the optical fibers. The quantum-limited noise figure of erbium-doped fiber amplifier (EDFA) or any phase-insensitive amplifier is 3 dB. LÄS MER

  7. 5. Phase-sensitive amplifiers for nonlinearity impairment mitigation in optical fiber transmission links

    Författare :Kovendhan Vijayan; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; NATURVETENSKAP; NATURAL SCIENCES; NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; modulation formats; self-phase modulation mitigation; optical transmission; nonlinearity mitigation; cross-phase modulation mitigation; phase-sensitive amplifier; copier-PSA; low-noise amplification; Volterra nonlinear equalizer;

    Sammanfattning : The fundamental limitations in fiber-optic communication are caused by optical amplifier noise and the nonlinear response of the optical fibers. The quantum-limited noise figure of erbium-doped fiber amplifiers (EDFAs) or any phase-insensitive amplifier is 3 dB. LÄS MER