Sökning: "low noise amplifier"
Visar resultat 31 - 35 av 82 avhandlingar innehållade orden low noise amplifier.
31. Microwave characterisation of electrodes and field effect transistors based on graphene
Sammanfattning : The isolation of the two-dimensional material graphene, a single hexagonal sheet of carbon atoms, is believed to trigger a revolution in electronics. Theory predicts unprecedented carrier velocities in ideal graphene, from which ultrahigh speed graphene field effect transistors (GFETs) are envisioned. LÄS MER
32. Nonlinearity mitigation in phase-sensitively amplified optical transmission links
Sammanfattning : The fundamental limitations in fiber-optic communication are caused by optical amplifier noise and the nonlinear response of the optical fibers. The quantum-limited noise figure of erbium-doped fiber amplifier (EDFA) or any phase-insensitive amplifier is 3 dB. LÄS MER
33. Phase-sensitive amplifiers for nonlinearity impairment mitigation in optical fiber transmission links
Sammanfattning : The fundamental limitations in fiber-optic communication are caused by optical amplifier noise and the nonlinear response of the optical fibers. The quantum-limited noise figure of erbium-doped fiber amplifiers (EDFAs) or any phase-insensitive amplifier is 3 dB. LÄS MER
34. Reconfigurable Receiver Front-Ends for Advanced Telecommunication Technologies
Sammanfattning : The exponential growth of converging technologies, including augmented reality, autonomous vehicles, machine-to-machine and machine-to-human interactions, biomedical and environmental sensory systems, and artificial intelligence, is driving the need for robust infrastructural systems capable of handling vast data volumes between end users and service providers. This demand has prompted a significant evolution in wireless communication, with 5G and subsequent generations requiring exponentially improved spectral and energy efficiency compared to their predecessors. LÄS MER
35. Cryogenic InP High Electron Mobility Transistors in a Magnetic Field
Sammanfattning : The InGaAs-InAlAs-InP high electron mobility transistor (InP HEMT) is the preferred active device used in a cryogenic low noise amplifier (LNA) for sensitive detection of microwave signals. In this thesis it is demonstrated that the InP HEMT, when placed in a magnetic field, has a strong angular dependence in its output current. LÄS MER