Sökning: "line defects"

Visar resultat 1 - 5 av 102 avhandlingar innehållade orden line defects.

  1. 1. Effect of swirling blade on flow pattern in nozzle for up-hill teeming

    Författare :Line Hallgren; Pär Jönsson; Jonas Alexis; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; swirling flow; up-hill teeming; nozzle; casting; fluid flow; modelling; CFD; LDA.; Metallurgical process engineering; Metallurgisk processteknik;

    Sammanfattning : The fluid flow in the mold during up-hill teeming is of great importance for the quality of the cast ingot and therefore the quality of the final steel products. At the early stage of the filling of an up-hill teeming mold, liquid steel enters, with high velocity, from the runner into the mold and the turbulence on the meniscus could lead to entrainment of mold flux. LÄS MER

  2. 2. A Study of the Initial Mould Filling during Up-hill Ingot Casting

    Författare :Line Hallgren; Pär Jönsson; Anders Tilliander; Seppo Louhenkilpi; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; swirling flow; up-hill teeming; nozzle; casting; fluid flow; modelling; CFD; LDA; swirl; ingot casting; filling; red eye;

    Sammanfattning : The fluid flow in the mould during up-hill teeming is of great importance for the quality of the cast ingot and thereby the quality of the final steel products. At the early stage of the filling of an up-hill teeming mould, liquid steel flows with a high velocity from the runner into the mould. LÄS MER

  3. 3. Color Centers in Semiconductors for Quantum Applications : A High-Throughput Search of Point Defects in SiC

    Författare :Joel Davidsson; Igor A. Abrikosov; Rickard Armiento; Viktor Ivády; Giulia Galli; Linköpings universitet; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; point defects; color centers; high-throughput; photoluminescence; zero phonon line; SiC;

    Sammanfattning : Point defects in semiconductors have been and will continue to be relevant for applications. Shallow defects realize transistors, which power the modern age of information, and in the not-too-distant future, deep-level defects could provide the foundation for a revolution in quantum information processing. LÄS MER

  4. 4. Atomistic simulations of lattice defects

    Författare :Mattias Forsblom; Grimvall Göran; Kai Nordlund; KTH; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Theoretical physics; Teoretisk fysik; Physics; Fysik;

    Sammanfattning : Mechanical properties of solids are governed by crystal imperfections. Computational materials science is largely concerned with the modelling of such defects, e.g. their formation, migration, and interaction energies. LÄS MER

  5. 5. Integration of graphene into MEMS and NEMS for sensing applications

    Författare :Xuge Fan; Frank Niklaus; Peter Steeneken; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Micro-electromechanical systems MEMS ; Nano-electromechanical systems NEMS ; heterogeneous 3D integration; Graphene; single-layer graphene; double-layer graphene; bilayer graphene; chemical vapor deposition CVD ; suspended graphene beams; suspended graphene membranes; doubly clamped; fully clamped; silicon on insulator SOI ; vapor hydrofluoric acid VHF ; Young’s modulus; built-in stress; built-in tension; piezoresistivity; gauge factor; accelerometer; resonators; electromechanical sensing; advanced transducers; humidity; gas sensing; sensitivity; CO2 sensing; graphene grain boundary; line defects; optical microscopy; wire bonding; Electrical Engineering; Elektro- och systemteknik;

    Sammanfattning : This thesis presents a novel approach to integrate chemical vapor deposition (CVD) graphene into silicon micro- and nanoelectromechanical systems (MEMS/NEMS) to fabricate different graphene based MEMS/NEMS structures and explore mechanical properties of graphene as well as their applications such as acceleration sensing, humidity sensing and CO2 sensing. The thesis also presents a novel method of characterization of CVD graphene grain boundary based defects. LÄS MER