Sökning: "light-emitting diode"
Visar resultat 6 - 10 av 44 avhandlingar innehållade orden light-emitting diode.
6. Fabrication and Characterization of ZnO Nanorods Based Intrinsic White Light Emitting Diodes (LEDs)
Sammanfattning : ZnO material based hetero-junctions are a potential candidate for the design andrealization of intrinsic white light emitting devices (WLEDs) due to several advantages overthe nitride based material system. During the last few years the lack of a reliable andreproducible p-type doping in ZnO material with sufficiently high conductivity and carrierconcentration has initiated an alternative approach to grow n-ZnO nanorods (NRs) on other ptypeinorganic and organic substrates. LÄS MER
7. Studies of Light Emitting Devices Based on Er-doped Si and SiGe Layered Structures
Sammanfattning : Doping with rare earth element erbium (Er) in Si has recently attracted a lot of research interest due to potential applications in Si-based opto-electronics. By using molecular beam epitaxy (MBE), precipitate-free Er-doping in Si has been made together with other co-dopants, e.g., oxygen (0) and fluorine (F), up to a level ∼1020 cm-3. LÄS MER
8. Semiconductor Nanowires: Epitaxy and Applications
Sammanfattning : Semiconductor nanowires are nanoscale objects formed by bottom-up synthesis. In recent years their unique properties have been exploited in fields such as electronics, photonics, sensors and the life sciences. In this work, the epitaxial growth of nanowires and their applications were studied. LÄS MER
9. Synthesis and Characterisation of Conjugated Polymers with High Electron Affinity
Sammanfattning : This thesis describes synthesis and characterisation of conjugated polymers with high electron affinities. Polymers of this type are desired, for example, for use in light-emitting devices or as electron accepting material in photodiodes/solar cells. LÄS MER
10. Towards Novel AlGaN-Based Light Emitters
Sammanfattning : The unique properties of the AlGaN semiconductors make them a suitable choice for optoelectronic devices at both short and long wavelengths, based on interband and intersubband transitions, respectively. What sets AlGaN apart from other wide-bandgap semiconductors is the possibility to obtain both p- and n-type conductivity as well as the direct bandgap. LÄS MER