Sökning: "kiselkarbid 4H-SiC"

Hittade 3 avhandlingar innehållade orden kiselkarbid 4H-SiC.

  1. 1. SiC CMOS and memory devices for high-temperature integrated circuits

    Detta är en avhandling från Stockholm : KTH Royal Institute of Technology

    Författare :Mattias Ekström; KTH.; [2019]
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; bismuth titanate Bi4Ti3O12 ; CMOS; ferroelectric capacitor; field oxide; inverter; metallisation; metal oxide semiconductor field effect transistor MOSFET ; ohmic contacts; ring oscillator; semiconductor processing; silicon carbide 4H-SiC ; CMOS; ferroelektrisk kondensator; fältoxid; halvledartillverkning; inverterare; kiselkarbid 4H-SiC ; metallisering; MOSFET; ohmska kontakter; ringoscillator; vismuttitanat Bi4Ti3O12 ; Informations- och kommunikationsteknik; Information and Communication Technology;

    Sammanfattning : High-temperature electronics find use in extreme environments, like data logging in downhole drilling for geothermal energy production, inside of high-temperature turbines, industrial gas sensors and space electronics. The simplest systems use a sensor and a transmitter, but more advance electronic systems would additionally require a microcontroller with memory. LÄS MER

  2. 2. Simulation and Electrical Evaluation of 4H-SiC Junction Field Effect Transistors and Junction Barrier Schottky Diodes with Buried Grids

    Detta är en avhandling från Stockholm : KTH Royal Institute of Technology

    Författare :Jang-Kwon Lim; KTH.; [2015]
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon carbide SiC ; junction field-effect transistors JFETs ; junction barrier schottky diode JBS ; schottky barrier diode SBD ; buried-grid BG technology; simulation; implantation; epitaxial growth; Electrical Engineering; Elektro- och systemteknik;

    Sammanfattning : Silicon carbide (SiC) has higher breakdown field strength than silicon (Si), which enables thinner and more highly doped drift layers compared to Si. Consequently, the power losses can be reduced compared to Si-based power conversion systems. Moreover, SiC allows the power conversion systems to operate at high temperatures up to 250 oC. LÄS MER

  3. 3. Advances in SiC growth using chloride-based CVD

    Detta är en avhandling från Linköping : Linköping University Electronic Press

    Författare :Stefano Leone; Linköpings universitet.; Linköpings universitet.; [2010]
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; NATURAL SCIENCES; NATURVETENSKAP;

    Sammanfattning : Silicon Carbide (SiC) is a wide band-gap semiconductor. Similar to silicon it can be used to make electronic devices which can be employed in several applications. SiC has some unique features, such as wide band-gap, high hardness, chemical inertness, and capability to withstand high temperatures. LÄS MER