Sökning: "ion implantation"
Visar resultat 21 - 25 av 36 avhandlingar innehållade orden ion implantation.
21. Process integration issues for high-performance bipolar technology
Sammanfattning : The work in this thesis has been focused on processintegration issues for high-performance bipolar technologyincluding experimental work on self-aligned silicides,ion-implanted andin situdoped polysilicon emitters, strained silicongermanium for heterojunction bipolar transistors and physicalprocess and device simulation.Key issues for the self-aligned silicidation of small devicefeatures such as the influence of dopants, silicon morphologyand line width on titanium disilicide formation, phasetransformation and temperature stability, have been addressed. LÄS MER
22. Silicon Carbide Technology for High- and Ultra-High-Voltage Bipolar Junction Transistors and PiN Diodes
Sammanfattning : Silicon carbide (SiC) is an attractive material for high-voltage and high-temperature electronic applications owing to the wide bandgap, high critical electric field, and high thermal conductivity. High- and ultra-high-voltage silicon carbide bipolar devices, such as bipolar junction transistors (BJTs) and PiN diodes, have the advantage of a low ON-resistance due to conductivity modulation compared to unipolar devices. LÄS MER
23. Spectroscopic studies of irradiation induced defects in SiC
Sammanfattning : Silicon carbide (SiC) with its applications has the potential to affect the everyday life of most citizens. As a material it has some outstanding properties concerning its mechanical and chemical toughness as well as its electrical properties for high power and high frequency applications. LÄS MER
24. Copper germanide schottky contacts to silicon and electrically active defects in n-type 6H-SiC and 4H-SiC epitaxial layers
Sammanfattning : Metallization for contacts to silicon devices presents amajor challenge as the linewidths are further reduced into thesub-micron regime. Copper germanide due to its relatively lowroom temperature resistivity ( ~ 10 µΩ - cm) has beenexamined as a potential contact metallixation. LÄS MER
25. Characterization of Process-related Defects in Silicon Carbide by Electron Microscopy
Sammanfattning : Silicon carbide (SiC) is a semiconducting material, which provides advantages compared to other available semiconducting materials. Attractive properties of SiC are the wide bandgap (2.2-3.3 eV), high electric breakdown field (3x106 Vcm-1), high thermal conductivity (5 Wcm-1 K-1) and the chemical stabi!ity. LÄS MER