Sökning: "ion implantation"

Visar resultat 16 - 20 av 36 avhandlingar innehållade orden ion implantation.

  1. 16. At the heart of Quantum Materials: Magnetism as a means and an end from a muon perspective

    Författare :Konstantinos Papadopoulos; Chalmers tekniska högskola; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; magnetism; ion dynamics; phase transitions; muon spectroscopy; correlated systems; quantum materials;

    Sammanfattning : Functional materials are at the center of solid state physics research and technological innovation in our era. In order to create (semi)autonomous, high precision and lightning-fast devices it is necessary to explore, modify and control the intrinsic properties of matter. LÄS MER

  3. 17. Materials analysis using MeV-ions: fundamental challenges and in-situ applications

    Författare :Karim-Alexandros Kantre; Daniel Primetzhofer; Hans-Christian Hofsäss; Uppsala universitet; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; in-situ characterization; ion beam analysis; heavy ions; reactive thin film growth; materials modification; yttrium oxyhydrides; fuel retention;

    Sammanfattning : The interaction of energetic ions with matter is highly relevant for a wide range of applications. Amongst them, material characterization employing ion beams is widely used due to its capability of high-resolution composition depth profiling. LÄS MER

  4. 18. Ventricular fibrillation and defibrillation in patients with implantable cardioverter defibrillators

    Författare :Mikael Runsiö; Karolinska Institutet; Karolinska Institutet; []
    Nyckelord :ventricular fibrillation; defibrilla~ion; implantable cardioverter defibrillator; haemodynamic; metabolism; hyperaemia; ischaemia; myocardial injury; histamine; neuropeptide 1: noradrenaline; endothelin; histamine; positron emission tomography.;

    Sammanfattning : Since the introduction of the implantable cardioverter defibrillator for humans with malignant ventricular arrhythmias in 1980, over 50, 000 patients world wide have received this device. The implantation procedure is simple and resembles the implantation of an ordinary pacemaker. LÄS MER

  5. 19. Impact of Ionizing Radiation on 4H-SiC Devices

    Författare :Muhammad Usman; Anders Hallén; Einar Örn Sveinbjörnsson; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon carbide; ionizing radiation; bipolar junction transistors; reliability; surface passivation; high-k dielectrics; MIS; radiation hardness;

    Sammanfattning : Electronic components, based on current semiconductor technologies and operating in radiation rich environments, suffer degradation of their performance as a result of radiation exposure. Silicon carbide (SiC) provides an alternate solution as a radiation hard material, because of its wide bandgap and higher atomic displacement energies, for devices intended for radiation environment applications. LÄS MER

  7. 20. Capacitance transient measurements on point defects in silicon and silicol carbide

    Författare :Hanne Kortegaard Nielsen; Anders Hallén; F. Damie Auret; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Electronics; Elektronik; Electronics; Elektronik;

    Sammanfattning : Electrically active point defects in semiconductor materials are important because they strongly affect material properties like effective doping concentration and charge carrier lifetimes. This thesis presents results on point defects introduced by ion implantation in silicon and silicon carbide. LÄS MER