Sökning: "high-k"

Visar resultat 11 - 15 av 54 avhandlingar innehållade ordet high-k.

  1. 11. Novel concepts for advanced CMOS : Materials, process and device architecture

    Författare :Dongping Wu; KTH; []
    Nyckelord :CMOS technology; MOSFET; high-k; gate dielectric; ALD; surface pre-treatment; metal gate; poly-SiGe; strained SiGe; surface-channel; buried-channel; notched gate;

    Sammanfattning : The continuous and aggressive dimensional miniaturization ofthe conventional complementary-metal-oxide semiconductor (CMOS)architecture has been the main impetus for the vast growth ofIC industry over the past decades. As the CMOS downscalingapproaches the fundamental limits, unconventional materials andnovel device architectures are required in order to guaranteethe ultimate scaling in device dimensions and maintain theperformance gain expected from the scaling. LÄS MER

  3. 12. Charge carrier traffic at interfaces in nanoeletronic structures

    Författare :Bahman Raeissi; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; NATURVETENSKAP; NATURAL SCIENCES; HfO2; oxide traps; High-k; interface states;

    Sammanfattning : This thesis describes investigations in relation to the search for materials with high dielectric constant, k, for future CMOS transistors. The most elementary quantities to be considered are k-value and energy band offsets between the dielectric and the silicon crystal on which it is deposited. LÄS MER

  4. 13. Vertical Nanowire High-Frequency Transistors

    Författare :Sofia Johansson; NanoLund: Centre for Nanoscience; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; nanowires; III-V semiconductors; metal-oxide-semiconductor field-effect transistors; border traps; high-k;

    Sammanfattning : This thesis explores a novel transistor technology based on vertical InAs nanowires, which could be considered both for low-power high-frequency analog applications and for replacing Si CMOS in the continued scaling of digital electronics. The potential of this device - the vertical InAs nanowire MOSFET – lies in the combination of the outstanding transport properties of InAs and the improved electrostatic control of the gate-all-around geometry. LÄS MER

  5. 14. Surface Science Studies of Metal Oxides Formed by Chemical Vapour Deposition on Silicon

    Författare :Patrik Karlsson; Anders Sandell; Håkan Rensmo; Marcus Bäumer; Uppsala universitet; []
    Nyckelord :Physics; chemical vapour deposition; high-k; metal oxides; silicon; dye-solid interface; metal organic; electron spectroscopy; scanning tunnelling microscopy; Fysik;

    Sammanfattning : For an electronic device well-designed interfaces are critical for the performance. Studies of interfaces down to an atomic level are thus highly motivated both from a fundamental and technological point of view. LÄS MER

  7. 15. Electronic Properties of Metal Oxide Films Studied by Core Level Spectroscopy

    Författare :Jan Hinnerk Richter; Anders Sandell; Håkan Rensmo; Anne Borg; Uppsala universitet; []
    Nyckelord :Physics; electron spectroscopy; metal oxide; chemical vapour deposition; ion insertion; metal organic; band alignment; zirconium; titanium; silicon; high k; Fysik;

    Sammanfattning : In this dissertation core level electron spectroscopy has been employed to study various aspects of metal oxide films grown under ultra-high vacuum conditions. Studies on in situ ion insertion of lithium into thin TiO2 systems were performed. LÄS MER