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Visar resultat 1 - 5 av 135 avhandlingar som matchar ovanstående sökkriterier.

1. 1. High Frequency Characterization and Modeling of SiGe Heterojunction Bipolar Transistors

   Författare :B. Gunnar Malm; KTH; []
   Nyckelord :Silicon-Germanium SiGe ; heterojunction bipolar transistor HBT ; low-frequency noise; high-frequency noise; harmonic distortion; linearity; device simulation; collector profile; epitaxial base integration; radio frequency RF ; radio frequency inte;

   Sammanfattning : .... LÄS MER

3. 2. Hot-wall MOCVD for advanced GaN HEMT structures and improved p-type doping

   Författare :Alexis Papamichail; Vanya Darakchieva; Anelia Kakanakova-Gueorguieva; Jr-Tai Chen; Zlatko Sitar; Linköpings universitet; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Hot-wall MOCVD; III-nitrides; p-type GaN; HEMTs; Linearity; High-Al barrier;

   Sammanfattning : The transition to energy efficient smart grid and wireless communication with improved capacity require the development and optimization of next generation semiconductor technologies and electronic device components. Indium nitride (InN), gallium nitride (GaN) and aluminum nitride (AlN) compounds and their alloys are direct bandgap semiconductors with bandgap energies ranging from 0. LÄS MER

4. 3. GaN HEMT Low Noise Amplifiers for Radio Base Station Receivers

   Författare :Pirooz Chehrenegar; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; gallium nitride GaN ; radio base station receiver; cascode; high linearity; robustness.; cascade; high electron mobility transistor HEMT ; low noise; low noise amplifier;

   Sammanfattning : Gallium nitride (GaN) high electron mobility transistor (HEMT) has been introduced as the technology of choice for high power microwave applications due to its material properties including high saturation electron velocity and breakdown field together with excellent thermal conductivity and robustness.It is also a promising candidate for receiver front-ends in the radio base station(RBS) where low noise figure and high linearity are key issues for low noiseamplifier (LNA) design. LÄS MER

5. 4. Design of High Linearity MMIC Power Amplifiers for Space Applications

   Författare :Oliver Silva Barrera; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; pHEMT; GaAs; reliability; Power amplifier; non-linear modeling; Junction temperature; C-Band; Infrared measurements;

   Sammanfattning : The high linearity performance in satellite transmitters is receiving increasing attention due to the demands of higher data rates in satellite communication links. During the last decade, digital communication links in satellite system have been replacing the previous analog links increasing the channel efficiency by allocating multiple carriers in the transponder bandwidth. LÄS MER

7. 5. Development of SiC MESFET Based MMIC Technology

   Författare :Mattias Sudow; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; MIM capacitor; high power amplifier; limiter; SiC MMIC; SiC MESFET; SiC Schottky; TFR; high levelmixer; spiral inductor; via-hole;

   Sammanfattning : A SiC MESFET based MMIC process has been successfully developed. This technology has its main potential in high power microwave circuits. It will offer the benefits of the high integration seen in GaAs MMIC at the same time as it will offer the benefits of the high voltage operation seen in Si LDMOS and Si BJTs. LÄS MER