Sökning: "high frequency characterization"

Visar resultat 6 - 10 av 229 avhandlingar innehållade orden high frequency characterization.

  1. 6. Design, Processing, and Characterization of High Frequency Flip Chip Interconnects

    Författare :Wei-Cheng Wu; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; coaxial; microwave; interconnect; transition; high frequency; microstrip; coplanar waveguide; flip chip; hot-via; packaging;

    Sammanfattning : The demands for high frequency interconnect techniques for microwave integrated circuits (ICs) are growing with increasing operating frequencies of wireless communication systems. Interconnects have significant effect and impact on the overall system performance at high frequencies. LÄS MER

  3. 7. Optical interconnects and high frequency electronic packaging : SBU-materials, material characterization, LAP- & microprocessing

    Författare :Steffen Uhlig; Linköpings universitet; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; optical interconnects; overview opto coupling components; overview planar waveguide amplifiers; large area panel processing; polymer waveguides; multilayer thin film technology; ORMOCER®; sequential build up; permittivity; dielectric loss;

    Sammanfattning : The main objective of this thesis is to discuss and demonstrate optical interconnect technologies. These can be used to enhance the data throughput capacity of future printed circuit boards and backplanes, i.e. exchange Copper conductors with light conductors. LÄS MER

  4. 8. Microwave and millimeter wave CMOS Characterization, modeling, and design

    Författare :Mattias Ferndahl; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; load-pull; microwave; large-signal; silicon; characterization; modeling; balun; LSNA; frequency doubler; millimeter wave; power amplifier; CMOS;

    Sammanfattning : The use of CMOS technologies for microwave and millimeter wave applications has recently been made possible as a result of increased transistor performance. The fT and fmax have, for example, passed 100 GHz at the 130 nm node and 200 GHz at the 65 nm node. LÄS MER

  5. 9. Electrical characterization of high-frequency silicon bipolar transistors

    Författare :Martin Sandén; KTH; []
    Nyckelord :;

    Sammanfattning : .... LÄS MER

  7. 10. Radio Frequency InGaAs MOSFETs

    Författare :Navya Sri Garigapati; NanoLund: Centre for Nanoscience; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; III-V compound semiconductor; InGaAs MOSFET; Quantum well; Nanowire; Radio Frequency; Band structure calculation; k.p calculations; Strain engineering; ballistic electron transport; S-parameters;

    Sammanfattning : III-V-based Indium gallium arsenide is a promising channel material for high-frequency applications due to its superior electron mobility property. In this thesis, InGaAs/InP heterostructure radio frequency MOSFETs are designed, fabricated, and characterized. LÄS MER