Sökning: "high frequency characterization"

Visar resultat 11 - 15 av 229 avhandlingar innehållade orden high frequency characterization.

  1. 11. III-V Nanowire MOSFET High-Frequency Technology Platform

    Författare :Stefan Andric; Nanoelektronik; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; MOSFET; III-V; nanowire NW ; Technology library; Process Monitor Structures; Radio Frequency; millimeter wave mmWave ; Compact Modelling; Circuit Design; Matching Networks; Low Noise Amplifier;

    Sammanfattning : This thesis addresses the main challenges in using III-V nanowireMOSFETs for high-frequency applications by building a III-Vvertical nanowire MOSFET technology library. The initial devicelayout is designed, based on the assessment of the current III-V verticalnanowire MOSFET with state-of-the-art performance. LÄS MER

  3. 12. Low-frequency noise in high-k gate stacks with interfacial layer engineering

    Författare :Maryam Olyaei; Bengt Gunnar Malm; Paolo Pavan; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; CMOS; high k; 1 f noise; low-frequency noise; number fluctuations; mobility fluctuat ions; traps; interfacial layer; TmSiO; Tm 2O3; Informations- och kommunikationsteknik; Information and Communication Technology;

    Sammanfattning : The rapid progress of complementary-metal-oxide-semiconductor (CMOS) integrated circuit technology became feasible through continuous device scaling. The implementation of high-k/metal gates had a significantcontribution to this progress during the last decade. However, there are still challenges regarding the reliability of these devices. LÄS MER

  4. 13. Electromagnetic characterization of power electronic systems

    Författare :Mathias Enohnyaket; Mats Alaküla; Luleå tekniska universitet; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Industriell elektronik; Industrial Electronics;

    Sammanfattning : Propelled by increased global awareness and demand for clean energy systems, there is a growing trend in transportation, utility, industrial, and residential applications towards the utilisation of power electronic systems with enhanced power ow controllability and eciency. Examples of power electronics applications include terminal converters in high-voltage direct Current (HVDC) transmission; exible AC transmission systems (FACTS); and converters to interface alternative energy systems such as wind turbines to the grid, variable-speed motor drives in pump systems, vehicular propulsion systems, air-conditioners, and refrigerators. LÄS MER

  5. 14. Polymer-shelled Ultrasound Contrast Agents : Characterization and Application

    Författare :Dmitry Grishenkov; Leif Kari; Lars-Åke Brodin; Michel Versluis; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; MEDICIN OCH HÄLSOVETENSKAP; MEDICAL AND HEALTH SCIENCES; ultrasound; contrast agents; microbubbles; polymer; perfusion; Acoustics; Akustik; Material physics with surface physics; Materialfysik med ytfysik; Cardiovascular medicine; Kardiovaskulär medicin; Cardiology; Kardiologi;

    Sammanfattning : Ultrasound-based imaging technique is probably the most used approach for rapid investigationand monitoring of anatomical and physiological conditions of internal organs and tissues.Ultrasound-based techniques do not require the use of ionizing radiation making the tests anexceptionally safe and painless. LÄS MER

  7. 15. Low-frequency noise characterization, evaluation and modeling of advanced Si- and SiGe-based CMOS transistors

    Författare :Martin von Haartman; Mikael Östling; Cor Claeys; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; MOSFET; SOI; SiGe; strain; high-k; metal gate; 1 f noise; low-frequency noise; mobility fluctuations; phonons; number fluctuations; traps; buried channel; mobility; substrate bias; Electronics; Elektronik;

    Sammanfattning : A wide variety of novel complementary-metal-oxide-semiconductor (CMOS) devices that are strong contenders for future high-speed and low-noise RF circuits have been evaluated by means of static electrical measurements and low-frequency noise characterizations in this thesis. These novel field-effect transistors (FETs) include (i) compressively strained SiGe channel pMOSFETs, (ii) tensile strained Si nMOSFETs, (iii) MOSFETs with high-k gate dielectrics, (iv) metal gate and (v) silicon-on-insulator (SOI) devices. LÄS MER