Sökning: "high frequency applications"

Visar resultat 16 - 20 av 675 avhandlingar innehållade orden high frequency applications.

1. 16. CVD growth of SiC for high-power and high-frequency applications

   Författare :Robin Karhu; Jawad ul-Hassan; Einar Sveinbjörnsson; Burk Albert; Linköpings universitet; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES;

   Sammanfattning : Silicon Carbide (SiC) is a wide bandgap semiconductor that has attracted a lot of interest for electronic applications due to its high thermal conductivity, high saturation electron drift velocity and high critical electric field strength. In recent years commercial SiC devices have started to make their way into high and medium voltage applications. LÄS MER

3. 17. Silicon Integrated HBV Frequency Multipliers for THz Applications

   Författare :Aleksandra Malko; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; frequency multipliers; Heterostrucutre Barrier Varactors HBVs ; THz sources; wafer bonding.; integrated circuits; heterogeneous integration; Compund semiconductors; epitaxial transfer; MICs;

   Sammanfattning : This thesis deals with integrated varactor diode circuits for terahertz (THz) applications. In particular hybrid, monolithic microwave integrated circuits (MMICs), and heterogeneous integration are explored for frequency multiplier applications. LÄS MER

4. 18. Color Centers in Semiconductors for Quantum Applications : A High-Throughput Search of Point Defects in SiC

   Författare :Joel Davidsson; Igor A. Abrikosov; Rickard Armiento; Viktor Ivády; Giulia Galli; Linköpings universitet; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; point defects; color centers; high-throughput; photoluminescence; zero phonon line; SiC;

   Sammanfattning : Point defects in semiconductors have been and will continue to be relevant for applications. Shallow defects realize transistors, which power the modern age of information, and in the not-too-distant future, deep-level defects could provide the foundation for a revolution in quantum information processing. LÄS MER

5. 19. Radio Frequency InGaAs MOSFETs

   Författare :Navya Sri Garigapati; NanoLund: Centre for Nanoscience; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; III-V compound semiconductor; InGaAs MOSFET; Quantum well; Nanowire; Radio Frequency; Band structure calculation; k.p calculations; Strain engineering; ballistic electron transport; S-parameters;

   Sammanfattning : III-V-based Indium gallium arsenide is a promising channel material for high-frequency applications due to its superior electron mobility property. In this thesis, InGaAs/InP heterostructure radio frequency MOSFETs are designed, fabricated, and characterized. LÄS MER

7. 20. Heterostructure Barrier Varactor Diodes for Frequency Multiplier Applications

   Författare :Jan Stake; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; III-V semiconductor; millimetre- and submillimetre wave power source; Heterostructure Barrier Varactor HBV ; frequency multiplier; varactor diode;

   Sammanfattning : This thesis deals with fabrication, characterisation and modelling of the Heterostructure Barrier Varactor (HBV) diode and its use in frequency multiplier circuits. Different aspects of material structures and frequency multipliers are described. LÄS MER