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Visar resultat 1 - 5 av 60 avhandlingar som matchar ovanstående sökkriterier.

1. 1. Silicon nanowire based devices for More than Moore Applications

   Författare :Ganesh Jayakumar; Per-Erik Hellström; Mikael Östling; Luca Selmi; KTH; []
   Nyckelord :silicon nanowire; biosensor; CMOS; sequential integration; lab-on-chip; LOC; high-K; high-K integration on SiNW biosensor; ALD; fluid gate; back gate; SiNW; SiNW pixel matrix; FEOL; pattern transfer lithography; sidewall transfer lithography; STL; multi-target bio detection; BEOL; nanonets; silicon nanonets; SiNN-FET; SiNW-FET; CMOS integration of nanowires; CMOS integration of nanonets; monolithic 3D integration of nanowires; above-IC integration of nanowires; DNA detection using SiNW; SiNW biosensor; dry environment DNA detection; DNA hybridization detection using SiNW; SiNW functionalization; SiNW silanization; SiNW grafting; FEOL integration of SiNW; BEOL integration of SiNW; sequential multiplexed biodetection; biodetection efficiency of SiNW; front end of line integration of SiNW; back end of line integration of SiNW; SiNW dry environment functionalization; APTES cross-linker; accessing SiNW test site; fluorescence microscopy of SiNW; geometry of SiNW; SiNW biosensor variability; top-down fabrication of SiNW; bottom-up fabrication of SiNW; VLS method; ams foundry CMOS process; adding functionality in BEOL process; sensor integration in BEOL process; hafnium oxide; HfO2; aluminium oxide; Al2O3; TiN backgate; Nickel source drain; ISFET; ion sensitive field effect transistor; Overcoming Nernst limit of detection using SiNW; SiNW sub-threshold region operation; ASIC; SOC; SiGe selective epitaxy; epitaxial growth of SiNW; epitaxial growth of nanowires; epitaxial growth of nanonets; nickel silicide contacts; salicide process; high yield SiNW fabrication; high volume SiNW fabrication; silicon ribbon; SiRi pixel; SiRi biosensor; SiRi DNA detection; monolithic 3D integration of nanonets; above-IC integration of nanonets; impact of back gate voltage on silicon nanowire; impact of back gate voltage on SiNW; FDSOI; fully depleted silicon on insulator technology; metal backgate; wafer scale integration of SiNW; wafer scale integration of nanonets; impact of backgate voltage on CMOS inverter circuit; frequency divider; D flip-flop; Informations- och kommunikationsteknik; Information and Communication Technology;

   Sammanfattning : Silicon nanowires (SiNW) are in the spotlight for a few years in the research community as a good candidate for biosensing applications. This is attributed to their small dimensions in nanometer scale that offers high sensitivity, label-free detection and at the same time utilizing small amount of sample. LÄS MER

3. 2. CMOS High Frequency Circuits for Spin Torque Oscillator Technology

   Författare :Tingsu Chen; Ana Rusu; Jerzy Dabrowski; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; microwave integrated circuit; CMOS; spin torque oscillator; Balun-LNA; wideband amplifier; on-chip bias-tee; multi-standard multi-band radios;

   Sammanfattning : Spin torque oscillator (STO) technology has a unique blend of features, including but not limited to octave tunability, GHz operating frequency, and nanoscaled size, which makes it highly suitable for microwave and radar applications. This thesis studies the fundamentals of STOs, utilizes the state-of-art STO's advantages, and proposes two STO-based microwave systems targeting its microwave applications and measurement setup, respectively. LÄS MER

4. 3. Linear Transmitter Design Using Nonlinear Analog Circuits

   Författare :Bo Shi; Institutionen för elektro- och informationsteknik; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Telecommunication engineering; Elektronik och elektroteknik; Electronics and Electrical technology; BiCMOS.; CMOS; ASIC; Radio-frequency circuits; Translinear circuits; RF power amplifier linearization; Linear transmitter; Nonlinear analog circuits; Telekommunikationsteknik;

   Sammanfattning : This dissertation deals with analog techniques at both the architecture and circuit design levels for designing power efficient linear radio-frequency (RF) transmitters. The use of nonlinear analog integrated circuits to implement certain critical signal processing functions for the multiplicative feedback and LINC techniques is investigated with the aim of improving the system performance in terms of complexity, linearity and power efficiency. LÄS MER

5. 4. High Data Throughput CMOS Circuits

   Författare :Anders Edman; Linköpings universitet; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY;

   Sammanfattning : This thesis describes some high-performance digital CMOS circuits and the design of these circuits.The goal is to have a higher utilization of standard CMOS processes in order to increase performance of digital circuits. This is done without the use of aggressive processes. LÄS MER

7. 5. Low-frequency noise in high-k gate stacks with interfacial layer engineering

   Författare :Maryam Olyaei; Bengt Gunnar Malm; Paolo Pavan; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; CMOS; high k; 1 f noise; low-frequency noise; number fluctuations; mobility fluctuat ions; traps; interfacial layer; TmSiO; Tm 2O3; Informations- och kommunikationsteknik; Information and Communication Technology;

   Sammanfattning : The rapid progress of complementary-metal-oxide-semiconductor (CMOS) integrated circuit technology became feasible through continuous device scaling. The implementation of high-k/metal gates had a significantcontribution to this progress during the last decade. However, there are still challenges regarding the reliability of these devices. LÄS MER