Sökning: "high electron mobility transistor HEMT"

Visar resultat 6 - 10 av 28 avhandlingar innehållade orden high electron mobility transistor HEMT.

  1. 6. InP HEMT Technology and Applications

    Författare :Anders Mellberg; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Indium phosphide InP ; cryogenic LNA; high electron mobility transistor HEMT ; metal-insulator-metal capacitor; MODFET; thin film resistor; semiconductor device fabrication; MMIC;

    Sammanfattning : Indium phosphide high electron mobility transistors (InGaAs/InAlAs/InP HEMTs) exhibit the highest cut-off frequencies and the lowest microwave noise figures of all transistor technologies. Both InP HEMT technology and associated circuit demonstrators are therefore interesting to explore further. LÄS MER

  3. 7. InP High Electron Mobility Transistors for Cryogenic Low-Noise and Low-Power Amplifiers

    Författare :Eunjung Cha; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; indium channel content; electrical stability.; dc power dissipation; noise temperature; scaling; low-noise amplifier LNA ; InP high-electron mobility transistor InP HEMT ; cryogenic;

    Sammanfattning : The InAlAs/InGaAs/InP high-electron mobility transistor (InP HEMT) is the preferred low-noise device in cryogenic low-noise amplifiers (LNAs) operating at 5-15 K. Such LNAs are utilized in microwave and millimeter-wave detection in radio astronomy. LÄS MER

  4. 8. Heterostructure Field Effect Transistors and Millimeter Wave Integrated Circuits

    Författare :Niklas Rorsman; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; subharmonic; resistive mixer; Modulation Doped Field Effect Transistor MODFET ; heterostructure field effect transistor HFET ; monolithic microwave integrated circuits MMIC ; frequency multiplier; amplifier; III-V semiconductor; small signal model; electron beam lithography; High Electron Mobility Transistor HEMT ; large signal model; pseudomorphic;

    Sammanfattning : This thesis deals with the research and development of HFETs and HFET based circuits. One of the main aims of the work presented in this thesis has been to develop processes to fabricate state of the art devices and circuits. LÄS MER

  5. 9. Design and Fabrication of InP High Electron Mobility Transistors for Cryogenic Low-Noise Amplifiers

    Författare :Junjie Li; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Channel noise; InP HEMT; cryogenic; subthreshold swing.; noise temperature; spacer thickness; low-noise amplifier;

    Sammanfattning : High electron mobility transistor (InP HEMT) cryogenic low noise amplifiers (LNAs) have made significant improvements in noise and gain following decades of development. Applications are found from radio astronomy to quantum computing. LÄS MER

  7. 10. RF and Noise Optimization of Pseudomorphic inP HEMT Technology

    Författare :Mikael Malmkvist; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; fabrication; high electron mobility transistor HEMT ; optimization; Schottky layer; InAlAs; Indium phosphide InP ; MMIC.; noise; pseudomorphic; modeling; InGaAs;

    Sammanfattning : The InGaAs-InAlAs-InP high electron mobility transistor (InP HEMT) is the electronic device utilized for the highest frequency and/or the lowest noise applications known to date for analog transistor-based circuits. Hence it is of both scientific and technological interest to explore the InP HEMT for even further improvement in device performance. LÄS MER