Sökning: "high electron mobility transistor HEMT"

Visar resultat 21 - 25 av 28 avhandlingar innehållade orden high electron mobility transistor HEMT.

1. 21. Advanced Analog MMICs for mm-wave Communication and Remote Sensing in 0.15µm mHEMT Technology

   Författare :Marcus Gavell; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; GaAs; Point-To-Point; E-band; Modulators; HEMT; Receiver; microwave; Mixers; Geostationary; mm-wave;

   Sammanfattning : Multi-Gigabit per second wireless communication and atmospheric remote sensing for weather forecasts are new applications in the mm-wave frequency spectra. The High Electron Mobility Transistor is an excellent technology for high frequency mm-wave applications. Its low noise and linear performance makes a 0. LÄS MER

3. 22. Design and Characterization of MMIC IF VGA and Small Signal CMOS Millimeter Wave Amplifiers

   Författare :M. Anowar Masud; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; BCB; CMOS; GaAs; LNA; VGA; MMIC; HEMT;

   Sammanfattning : The main aim of this work is to demonstrate the easibility of designing and characterizing monolithic microwave integrated circuit (MMIC) variable gain amplifiers (VGA) and small signal amplifiers in III-V (GaAs) and 90 nm CMOS technologies, respectively. The VGA is studied at the IFfrequency of 2. LÄS MER

4. 23. GaN HEMT Low Frequency Noise Characterization for Low Phase Noise Oscillator Design

   Författare :Thi Ngoc Do Thanh; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Low frequency noise; flicker noise; phase noise; deposition method.; oscillator; VCO; GaAs pHEMT; MMIC; GaN HEMT; passivation; InGaP HBT;

   Sammanfattning : The thesis presents low frequency noise (LFN) characterization of Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) for low phase noise oscillator design. First, GaN HEMT technology is benchmarked versus other transistor technologies, e.g. LÄS MER

5. 24. Methods for Characterization and Optimization of AlGaN/GaN HEMT Surface Passivation

   Författare :Martin Fagerlind; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; NATURVETENSKAP; NATURAL SCIENCES; surface states; surface passivation; annealing; processing; AlGaN GaN HEMT; MIS-capacitor;

   Sammanfattning : The Gallium Nitride based high electron mobility transistor is rapidly improving and is emerging as a viable alternative for use in high power applications operating in the microwave frequency domain. The suitability of the AlGaN/GaN material system is due to the possibility to grow epitaxial heterostructures that provide; high electron mobility, high electron saturation velocity, high carrier density and a high dielectric breakdown field. LÄS MER

7. 25. Characterization of Microwave Transistors for Robust Receivers and High Efficiency Transmitters

   Författare :Mattias Thorsell; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; noise modeling; access resistance; self-heating; AlGaN GaN HEMT; thermal characterization; active load-pull; load modulation;

   Sammanfattning : The next generation of integrated transceiver front-ends needs both robustlow noise amplifiers and high power amplifiers on a single-chip. The AluminiumGallium Nitride / Gallium Nitride (AlGaN/GaN) High Electron MobilityTransistors (HEMT) is a suitable semiconductor technology for this purposedue to its high breakdown voltage and high electron mobility. LÄS MER