Sökning: "high electron mobility transistor HEMT"

Visar resultat 11 - 15 av 28 avhandlingar innehållade orden high electron mobility transistor HEMT.

1. 11. InAs/AlSb HEMTs for Cryogenic Low-Noise Applications

   Författare :Giuseppe Moschetti; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; cryogenic; metamorphic; high frequency; high electron mobility transistor HEMT ; low power; low noise.; InAs AlSb;

   Sammanfattning : The InAs/AlSb high electron mobility transistor (HEMT) is an emerging microwave device technology. The high electron mobility and high peak electron velocity of the InAs channel makes this device technology a potential candidate for low-noise applications operating at very low power dissipation. LÄS MER

3. 12. Ultra-Low Power InAs/AlSb HEMTs for Cryogenic Low-Noise Applications

   Författare :Giuseppe Moschetti; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; low noise; InAs AlSb; metamorphic; low power; high frequency; high electron mobility transistor HEMT ; cryogenic; ion implantation;

   Sammanfattning : The InAs/AlSb high electron mobility transistor (HEMT) is an emerging microwave device technology for ultra-low power and low noise applications. Due to the low bandgap (0. LÄS MER

4. 13. GaN-based HEMTs for Cryogenic Low-Noise Applications

   Författare :Mohamed Aniss Mebarki; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Cryogenic temperatures; superconductivity; RFI; High Electron Mobility Transistor HEMT ; Low Noise Amplifier LNA ; Niobium Nb ; Radio-astronomy; Gallium Nitride GaN ; high frequency;

   Sammanfattning : Radio-astronomy deals with signals and radiations of extremely weak intensity. Also, it requires robust and rugged technologies able to sustain and prevent the Radio Frequency Interferences (RFI). LÄS MER

5. 14. Growth and characterization of SiC and GaN

   Författare :Rafal Ciechonski; Erik Janzén; Sebastian Lourdudoss; Linköpings universitet; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; SiC; GaN; Deep level transient spectroscopy; Minority Carrier Transient Spectroscopy; Hall effect; Cathodoluminescence; Scanning electron microscopy; Atomic Force microscopy; sublimation growth; MOCVD; heterostructures; High Electron Mobility transistor; point defects; Material physics with surface physics; Materialfysik med ytfysik;

   Sammanfattning : At present, focus of the SiC crystal growth development is on improving the crystalline quality without polytype inclusions, micropipes and the occurrence of extended defects. The purity of the grown material, as well as intentional doping must be well controlled and the processes understood. LÄS MER

7. 15. InP-based heterostructure field effect transistors and millimeter wave integrated circuits

   Författare :Anders Mellberg; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; passive components; InP; MIM capacitor; high electron mobility transistor HEMT ; monolithic microwave integrated circuit MMIC ; CPW; TL; 2DEG; heterostructure field effect transistor HFET ; spiral inductor; modeling; wideband LNA; coplanar waveguides; microstrip transmission line; modulation doped field effect transistor MODFET ; III-V semiconductor; low noise amplifier; compound semiconductor; thin film resistor TFR ; indium phosphide; low noise amplifier;

   Sammanfattning : .... LÄS MER