Sökning: "high blocking voltage"

Visar resultat 6 - 10 av 16 avhandlingar innehållade orden high blocking voltage.

1. 6. Growth and characterization of SiC and GaN

   Författare :Rafal Ciechonski; Erik Janzén; Sebastian Lourdudoss; Linköpings universitet; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; SiC; GaN; Deep level transient spectroscopy; Minority Carrier Transient Spectroscopy; Hall effect; Cathodoluminescence; Scanning electron microscopy; Atomic Force microscopy; sublimation growth; MOCVD; heterostructures; High Electron Mobility transistor; point defects; Material physics with surface physics; Materialfysik med ytfysik;

   Sammanfattning : At present, focus of the SiC crystal growth development is on improving the crystalline quality without polytype inclusions, micropipes and the occurrence of extended defects. The purity of the grown material, as well as intentional doping must be well controlled and the processes understood. LÄS MER

3. 7. On Design of a Compact Primary Switched Conversion System for Electric Railway Propulsion

   Författare :Tommy Kjellqvist; Stefan Östlund; Alfred Rufer; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Isolated AC DC converter; Mutual commutation; Soft Switching; Cyclo converter; Medium-Frequency Transformer; Electric Railway Propulsion; Electrical engineering; Elektroteknik;

   Sammanfattning : In this thesis, a compact and light primary switched conversion system for AC-fed railway propulsion is investigated. It is characterized by soft switching of all converter stages and a source commutated primary converter comprising series connected valves. LÄS MER

4. 8. Simulation and Electrical Evaluation of 4H-SiC Junction Field Effect Transistors and Junction Barrier Schottky Diodes with Buried Grids

   Författare :Jang-Kwon Lim; Hans-Peter Nee; Mietek Bakowski; Ichiro Omura; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon carbide SiC ; junction field-effect transistors JFETs ; junction barrier schottky diode JBS ; schottky barrier diode SBD ; buried-grid BG technology; simulation; implantation; epitaxial growth; Electrical Engineering; Elektro- och systemteknik;

   Sammanfattning : Silicon carbide (SiC) has higher breakdown field strength than silicon (Si), which enables thinner and more highly doped drift layers compared to Si. Consequently, the power losses can be reduced compared to Si-based power conversion systems. Moreover, SiC allows the power conversion systems to operate at high temperatures up to 250 oC. LÄS MER

5. 9. Device characteristics of sublimation grown 4H-SiC layers

   Författare :Rafal Ciechonski; Linköpings universitet; []
   Nyckelord :NATURAL SCIENCES; NATURVETENSKAP;

   Sammanfattning : At present, focus of the SiC crystal growth development is on improving the crystalline quality without polytype inclusions, micropipes and the occurrence of extended defects. The purity of the grown material, as well as intentional doping must be well controlled and the processes understood. LÄS MER

7. 10. CVD growth and material quality control of silicon carbide

   Författare :Jie Zhang; Roland Rupp; Linköpings universitet; []
   Nyckelord :;

   Sammanfattning : SiC has emerged as a promising semiconductor to replace Si in high power, high frequency and high temperature electronics. Thanks 1to the advantageous intrinsic material properties, such as large band gap, high electric breakdown field, high thermal conductivity and highly inert chemical properties, intensified efforts world-wide have been attracted in developing crystal growth technology and device fabrication processes for the SiC components. LÄS MER