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Visar resultat 1 - 5 av 16 avhandlingar som matchar ovanstående sökkriterier.

1. 1. Silicon-Carbide-Based High-Voltage Submodules for HVDC Voltage-Source Converters

   Författare :Keijo Jacobs; Hans-Peter Nee; Staffan Norrga; Marc Hiller; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon carbide; HVDC converters; voltage source converters; modular multilevel converters; submodule topologies; metal-oxide-semiconductor field-effect transistor MOSFET ; insulated-gate bipolar-transistor IGBT ; power semiconductor devices; high-voltage; Electrical Engineering; Elektro- och systemteknik;

   Sammanfattning : In order to transition to renewable energy sources and simultaneously meet the increasing demand for electrical energy, highly flexible and efficient grids are required. High-voltage direct-current (HVDC) transmission and grids are foreseen to be a vital part of the future electricity grid. LÄS MER

3. 2. Efficient Modeling of Modular Multilevel Converters for HVDC Transmission Systems

   Författare :Noman Ahmed; Hans-Peter Nee; Tim Green; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; High-Voltage dc; Modular Multilevel Converter; Voltage-Source Converter; HVDC Grids; Multiterminal DC Systems; Hybrid HVDC Breaker; Modeling; Electrical Engineering; Elektro- och systemteknik;

   Sammanfattning : The drive towards getting more and more electrical energy from renewable sources, requires more efficient electric transmission systems. A stronger grid, with more controllability and higher capacity, that can handle power fluctuations due to a mismatch between generation and load is also needed. LÄS MER

4. 3. Junction Barrier Schottky Rectifiers in Silicon Carbide

   Författare :Fanny Dahlquist; KTH; []
   Nyckelord :silicon carbide; JBS rectifier; Junction Barrier Schottky JBS ; Schottky rectifier; MPS rectifier; power rectifier; punch-through design; power loss; high blocking voltage;

   Sammanfattning : .... LÄS MER

5. 4. Ultrahigh-Voltage Silicon Carbide Device Performance, Requirements, and Limitations in High-Power Applications

   Författare :Daniel Johannesson; Hans-Peter Nee; Staffan Norrga; Muhammad Nawaz; Alberto Castellazzi; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; 4H-SiC; Current Filamentation; Device Characterization; Dynamic Avalanche; JTE Structure; Junction Termination Extension Design; SiC BJT; SiC GTO Thyristor; SiC IGBT; SiC MOSFET; SiC PiN Diode; Silicon Carbide; TCAD Simulation; Wide bandgap device; Electrical Engineering; Elektro- och systemteknik;

   Sammanfattning : The increased awareness of the on-going climate change accelerates the electric energy system transformation from fossil-fueled power sources towards systems with larger portions of renewable energy sources. Moreover, the grid infrastructure requires reinforcements to cope with increasing electrical energy demand. LÄS MER

7. 5. Modelling and Interference Analysis of AC-DC Converters for Immunity to Voltage Disturbances up to 150 kHz

   Författare :Selcuk Sakar; Sarah Rönnberg; Math Bollen; Sjef Cobben; Luleå tekniska universitet; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; AC-DC power converters; electromagnetic compatibility EMC ; high frequency disturbances; supraharmonics; switching converters; interharmonics; conducted disturbances; Electric Power Engineering; Elkraftteknik;

   Sammanfattning : The function of electrical and electronic equipment is challenged by the high frequency emission originated from the more use of switching-based power electronic equipment and Power line communication (PLC) signaling. Investigations have shown that interferences occur in the frequency range between 2 kHz and 150 kHz, e.g. LÄS MER