Sökning: "heterojunction transistors"

Visar resultat 1 - 5 av 22 avhandlingar innehållade orden heterojunction transistors.

  1. 1. Graphene Hot-electron Transistors

    Författare :Sam Vaziri; Mikael Östling; Max Lemme; Suman Datta; KTH; []
    Nyckelord :Graphene; hot-electron transistors; graphene base transistors; GBT; cross-plane carrier transport; tunneling; ballistic transport; heterojunction transistors; graphene integration; graphene transfer; Informations- och kommunikationsteknik; Information and Communication Technology;

    Sammanfattning : Graphene base transistors (GBTs) have been, recently, proposed to overcome the intrinsic limitations of the graphene field effect transistors (GFETs) and exploit the graphene unique properties in high frequency (HF) applications. These devices utilize single layer graphene as the base material in the vertical hot-electron transistors. LÄS MER

  2. 2. SiGeC Heterojunction Bipolar Transistors

    Författare :Erdal Suvar; KTH; []
    Nyckelord :Silicon-Germanium-Carbon SiGeC ; Heterojunction bipolar transistor HBT ; chemical vapor deposition CVD ; selective epitaxy; non-selective epitaxy; collector design; high-frequency measurement; dopant segregation; thermal stability;

    Sammanfattning : Heterojunction bipolar transistors (HBT) based on SiGeC havebeen investigated. Two high-frequency architectures have beendesigned, fabricated and characterized. Different collectordesigns were applied either by using selective epitaxial growthdoped with phosphorous or by non-selective epitaxial growthdoped with arsenic. LÄS MER

  3. 3. Silicon Germanium heterojunction bipolar transistors : Large-signal modeling and low-frequency noise characterization aspects

    Författare :Staffan Bruce; Uppsala universitet; []
    Nyckelord :ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; Materials science; Silicon Germanium; SiGe; Heterojunction Bipolar Transistor; HBT; Large-signal modeling; thermal time constant; low-frequency noise: coherence; transimpedance amplifier; Materialvetenskap; Materials science; Teknisk materialvetenskap; Elektronik; Electronics;

    Sammanfattning : In this thesis, aspects of the Silicon Germanium (SiGe) Heterojunction Bipolar Transistor (HBT) are addressed. A physics-based electrical large-signal model including thermal dependence has been developed and is implemented using a commercially available simulator package. LÄS MER

  4. 4. Processing and characterization of GaN/SiC heterojunctions and SiC bipolar transistors

    Författare :Erik Danielsson; KTH; []
    Nyckelord :silicon carbide; gallium nitride; device simulation; bipolar junction transistor; heterojunction; heterojunction bipolar transistor; current-voltage measurement; capacitance-voltage measurement; self-heating;

    Sammanfattning : Silicon Carbide (SiC) and Gallium Nitride (GaN) are bothwide bandgap semiconductors that have been suggested for highpower, high voltage, and high temperature applications. Themost investigated SiC devices so far are the Schottky diode,PiN diode and the field effect transistor. LÄS MER

  5. 5. Ultra High Speed InP Heterojunction Bipolar Transistors

    Författare :Mattias Dahlström; KTH; []
    Nyckelord :InP HBT carbon high-speed;

    Sammanfattning : This thesis deals with the development of high speed InPmesa HBT’s with power gain cut—off frequencies up toand above 300 GHz, with high current density and low collectordischarging times.Key developments are Pd—based base ohmics yielding basecontact resistances as low as 10 Ωµm2, base—collector grades to enable to use ofInP in the collector, and an increase in the maximum currentdensity through collector design and thermal optimization. LÄS MER