Sökning: "heterojunction transistors"
Visar resultat 1 - 5 av 22 avhandlingar innehållade orden heterojunction transistors.
Sammanfattning : Graphene base transistors (GBTs) have been, recently, proposed to overcome the intrinsic limitations of the graphene field effect transistors (GFETs) and exploit the graphene unique properties in high frequency (HF) applications. These devices utilize single layer graphene as the base material in the vertical hot-electron transistors. LÄS MER
Sammanfattning : Heterojunction bipolar transistors (HBT) based on SiGeC havebeen investigated. Two high-frequency architectures have beendesigned, fabricated and characterized. Different collectordesigns were applied either by using selective epitaxial growthdoped with phosphorous or by non-selective epitaxial growthdoped with arsenic. LÄS MER
3. Silicon Germanium heterojunction bipolar transistors : Large-signal modeling and low-frequency noise characterization aspects
Sammanfattning : In this thesis, aspects of the Silicon Germanium (SiGe) Heterojunction Bipolar Transistor (HBT) are addressed. A physics-based electrical large-signal model including thermal dependence has been developed and is implemented using a commercially available simulator package. LÄS MER
Sammanfattning : Silicon Carbide (SiC) and Gallium Nitride (GaN) are bothwide bandgap semiconductors that have been suggested for highpower, high voltage, and high temperature applications. Themost investigated SiC devices so far are the Schottky diode,PiN diode and the field effect transistor. LÄS MER
Sammanfattning : This thesis deals with the development of high speed InPmesa HBTs with power gain cutoff frequencies up toand above 300 GHz, with high current density and low collectordischarging times.Key developments are Pdbased base ohmics yielding basecontact resistances as low as 10 Ωµm2, basecollector grades to enable to use ofInP in the collector, and an increase in the maximum currentdensity through collector design and thermal optimization. LÄS MER