Sökning: "heteroepitaxy"
Visar resultat 1 - 5 av 11 avhandlingar innehållade ordet heteroepitaxy.
1. Novel architectured, dislocation-free, III-Nitride structures for the next generation optoelectronic devices
Sammanfattning : III-Nitride (III-N) materials are promising building blocks of optoelectronic devices such as light emitting diode and laser diode due to the unique material properties. Furthermore, direct and tunable band gaps of III-N materials enable them to cover the entire visible-UV region of electromagnetic spectrum for device applications. LÄS MER
2. Interactions of molecules and solids within the density-functional theory
Sammanfattning : .... LÄS MER
3. Epitaxial Lateral Overgrowth of Indium Phosphide and Its Application in Heteroepitaxy
Sammanfattning : Monolithic integration of optoelectronics on silicon is adream. This thesis deals with the studies on the heteroepitaxyof indium phosphide on silicon substrate towards making thatdream come true. Materials growth issues, characterization anddefect identification are addressed. LÄS MER
4. Selective Epitaxy of Indium Phosphide and Heteroepitaxy of Indium Phosphide on Silicon for Monolithic Integration
Sammanfattning : A densely and monolithically integrated photonic chip on indium phosphide is greatly in need for data transmission but the present day’s level of integration in InP is very low. Silicon enjoys a unique position among all the semiconductors in its level of integration. LÄS MER
5. Gallium nitride templates and its related materials for electronic and photonic devices
Sammanfattning : .... LÄS MER