Sökning: "heteroepitaxy of GaN"

Hittade 5 avhandlingar innehållade orden heteroepitaxy of GaN.

  1. 1. Gallium nitride templates and its related materials for electronic and photonic devices

    Författare :Thomas Aggerstam; Sebastian Lourdudoss; Marc Ilegems; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; GaN; heteroepitaxy of GaN; BGaAlN; Fe doped GaN; HEMT; carrier capture cross section; intersubband transition modulator; Materials science; Teknisk materialvetenskap;

    Sammanfattning :  .... LÄS MER

  3. 2. Novel architectured, dislocation-free, III-Nitride structures for the next generation optoelectronic devices

    Författare :Maryam Khalilian; NanoLund: Centre for Nanoscience; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; III-Nitride materials; heteroepitaxy; 3D growth mode; optoelectronic devices; Fysicumarkivet A:2019:Khalilian;

    Sammanfattning : III-Nitride (III-N) materials are promising building blocks of optoelectronic devices such as light emitting diode and laser diode due to the unique material properties. Furthermore, direct and tunable band gaps of III-N materials enable them to cover the entire visible-UV region of electromagnetic spectrum for device applications. LÄS MER

  4. 3. Growth of thick GaN layers on sapphire by Hydride Vapour Phase Epitaxy

    Författare :Henrik Larsson; Werner Seifert; Linköpings universitet; []
    Nyckelord :NATURAL SCIENCES; NATURVETENSKAP;

    Sammanfattning : Gallium nitride (GaN) is a wide bandgap material that is already extensively used in industrial production of optoelectronic devices (light emitters) that operate in the blue and ultraviolet wavelength range. GaN is interesting not only because it has a wide bandgap (3. LÄS MER

  5. 4. Structural and elastic properties of InN and InAlN with different surface orientations and doping

    Författare :Mengyao Xie; Vanya Darakchieva; Jens Birch; Enrique Calleja; Linköpings universitet; []
    Nyckelord :;

    Sammanfattning : Group–III nitrides, InN, GaN, AlN, and their alloys, have revolutionized solid state lighting and continue to attract substantial research interest due to their unique properties and importance for optoelectronics and electronics. Among the group–III nitrides, InN has the lowest effective electron mass and the highest electron mobility, which makes it suitable for high–frequency and high power devices. LÄS MER

  7. 5. Junction Engineering in Nanostructured Optoelectronic Devices

    Författare :Ali Nowzari; NanoLund: Centre for Nanoscience; []
    Nyckelord :Nanowire; Solar cell; Photodetector; Light Emitting Diode; Doping Evaluation; Fysicumarkivet A:2018:Nowzari;

    Sammanfattning : Semiconductor nanowires have proven to be promising building blocks for next-generation optoelectronic devices. The nanometric dimensions of nanowires provides strain relaxation capability, thus enabling the heteroepitaxy of III-V materials on silicon, as well as providing the possibility of realizing optoelectronic devices with lattice-mismatched material combinations. LÄS MER