Sökning: "growth ALD"
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21 avhandlingar innehållade orden growth ALD.
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Författare :Ganesh Jayakumar; Per-Erik Hellström; Mikael Östling; Luca Selmi; KTH; []
Nyckelord :silicon nanowire; biosensor; CMOS; sequential integration; lab-on-chip; LOC; high-K; high-K integration on SiNW biosensor; ALD; fluid gate; back gate; SiNW; SiNW pixel matrix; FEOL; pattern transfer lithography; sidewall transfer lithography; STL; multi-target bio detection; BEOL; nanonets; silicon nanonets; SiNN-FET; SiNW-FET; CMOS integration of nanowires; CMOS integration of nanonets; monolithic 3D integration of nanowires; above-IC integration of nanowires; DNA detection using SiNW; SiNW biosensor; dry environment DNA detection; DNA hybridization detection using SiNW; SiNW functionalization; SiNW silanization; SiNW grafting; FEOL integration of SiNW; BEOL integration of SiNW; sequential multiplexed biodetection; biodetection efficiency of SiNW; front end of line integration of SiNW; back end of line integration of SiNW; SiNW dry environment functionalization; APTES cross-linker; accessing SiNW test site; fluorescence microscopy of SiNW; geometry of SiNW; SiNW biosensor variability; top-down fabrication of SiNW; bottom-up fabrication of SiNW; VLS method; ams foundry CMOS process; adding functionality in BEOL process; sensor integration in BEOL process; hafnium oxide; HfO2; aluminium oxide; Al2O3; TiN backgate; Nickel source drain; ISFET; ion sensitive field effect transistor; Overcoming Nernst limit of detection using SiNW; SiNW sub-threshold region operation; ASIC; SOC; SiGe selective epitaxy; epitaxial growth of SiNW; epitaxial growth of nanowires; epitaxial growth of nanonets; nickel silicide contacts; salicide process; high yield SiNW fabrication; high volume SiNW fabrication; silicon ribbon; SiRi pixel; SiRi biosensor; SiRi DNA detection; monolithic 3D integration of nanonets; above-IC integration of nanonets; impact of back gate voltage on silicon nanowire; impact of back gate voltage on SiNW; FDSOI; fully depleted silicon on insulator technology; metal backgate; wafer scale integration of SiNW; wafer scale integration of nanonets; impact of backgate voltage on CMOS inverter circuit; frequency divider; D flip-flop; Informations- och kommunikationsteknik; Information and Communication Technology;
Sammanfattning :
Silicon nanowires (SiNW) are in the spotlight for a few years in the research community as a good candidate for biosensing applications. This is attributed to their small dimensions in nanometer scale that offers high sensitivity, label-free detection and at the same time utilizing small amount of sample. LÄS MER
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Författare :Jan Sterner; Lars Stolt; Roland Scheer; Uppsala universitet; []
Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Electronics; thin film; Cu In; Ga Se2; CIGS; chalcopyrite; ALD; sulfurization; buffer layer; XPS; UPS; electron spectroscopy; band alignment; atomic layer deposition; Elektronik; Electronics; Elektronik;
Sammanfattning :
Cu(In,Ga)Se2 (CIGS) thin film solar cells contain a thin layer of CdS. To avoid toxic heavy-metal-containing waste in the module production the development of a cadmium-free buffer layer is desirable. This thesis considers alternative Cd-free buffer materials deposited by Atomic Layer Deposition (ALD). LÄS MER
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Författare :Björn Mårlid; Uppsala universitet; []
Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Chemistry; Boron nitride; boron; theoretical modelling; DFT; surface processes; surfaces; thin films; growth ALD; Kemi; Chemistry; Kemi; Inorganic Chemistry; oorganisk kemi;
Sammanfattning :
In vapour phase deposition, the knowledge and control of homogeneous and heterogeneous reactions in connection to precursor design may lead to the deposition of the desired material; structure or phase. This thesis is a document attempting to increase the knowledge of film growth in the B-N system. LÄS MER
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Författare :Katarina Forsgren; Steven George; Uppsala universitet; []
Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Chemistry; CVD; ALD; Dielectric constant; Tantalum oxide; Ta2O5; Zirconium oxide; ZrO2; Hafnium oxide; HfO2; QCM; Kemi; Chemistry; Kemi; Inorganic Chemistry; oorganisk kemi;
Sammanfattning :
Due to the constantly decreasing dimensions of electronic devices, the conventional dielectric material in transistors and capacitors, SiO2, has to be replaced by a material with higher dielectric constant. Some of the most promising candidates are tantalum oxide,Ta2O5, zirconium oxide, ZrO2 and hafnium oxide, HfO2. LÄS MER
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Författare :Jonas Sundqvist; Anders Hårsta; Roy Gordon; Uppsala universitet; []
Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Inorganic chemistry; CVD; ALD; tantalum oxide; hafnium oxide; tin oxide; epitaxy; Ta2O5; HfO2; SnO2; XRD; Oorganisk kemi; Inorganic chemistry; Oorganisk kemi; Inorganic Chemistry; Oorganisk kemi;
Sammanfattning :
Many materials exhibit interesting and novel properties when prepared as thin films. Thin film metal oxides have had an impact on the technological progress of the microelectronics mainly due to their electrical and optical properties. LÄS MER
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