Sökning: "geometrical magnetoresistance"
Hittade 3 avhandlingar innehållade orden geometrical magnetoresistance.
1. Charge carrier transport in field-effect transistors with two-dimensional electron gas channels studied using geometrical magnetoresistance effect
Sammanfattning : During the last decades, significant efforts have been made to exploit the excellent and promising electronic properties exhibited by field-effect transistors (FETs) with two-dimensional electron gas (2DEG) channels. The most prominent representatives of this class of devices are high-electron-mobility transistors (HEMTs) and graphene field-effect transistors (GFETs). LÄS MER
2. Cryogenic InP High Electron Mobility Transistors in a Magnetic Field
Sammanfattning : The InGaAs-InAlAs-InP high electron mobility transistor (InP HEMT) is the preferred active device used in a cryogenic low noise amplifier (LNA) for sensitive detection of microwave signals. In this thesis it is demonstrated that the InP HEMT, when placed in a magnetic field, has a strong angular dependence in its output current. LÄS MER
3. III-V Devices for Emerging Electronic Applications
Sammanfattning : Today’s digitalized society relies on the advancement of silicon (Si) Complementary Metal Oxide Semiconductor (CMOS) technology, but the limitations of down-scaling and the rapidly increasing demand for added functionality that is not easily achieved in Si, have pushed efforts to monolithically 3D-integrate III-V devices above the Si-CMOS technology. In addition, the demand for increased computational power and handling of vast amounts of data is rapidly increasing. LÄS MER