Sökning: "gate length"

Visar resultat 11 - 15 av 55 avhandlingar innehållade orden gate length.

  1. 11. Electron Transport in Semiconductor Nanowires

    Författare :Mikael Björk; Fasta tillståndets fysik; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; heterostructures; single electron transistors; resonant tunneling; quantum dots; weak antilocalization; Halvledarfysik; field effect transistors; Semiconductory physics; Fysicumarkivet A:2004:Björk; Low-dimensional structures; nanowires; chemical beam epitaxy;

    Sammanfattning : In this thesis, semiconductor nanowires are studied from the point of view of growth and electrical properties. The growth of nanowires is done by chemical beam epitaxy (CBE), an ultra-high vacuum technique allowing a precise control of precursor deposition and low growth rates. LÄS MER

  3. 12. InGaAs Nanowire and Quantum Well Devices

    Författare :Lasse Södergren; NanoLund: Centre for Nanoscience; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; nanowire; quantum well; cryogenic; III-V; InGaAs; MOSFET; MOVPE; Hall; mobility; ballistic; RF;

    Sammanfattning : To fulfill the increasing demand for high-speed electronics used for computation or communication is one everlasting challenge for the semiconductor industry. Emerging fields such as quantum computation also has a need for circuits operating at cryogenic temperatures. LÄS MER

  4. 13. Charge carrier transport in field-effect transistors with two-dimensional electron gas channels studied using geometrical magnetoresistance effect

    Författare :Isabel Harrysson Rodrigues; Chalmers tekniska högskola; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; NATURVETENSKAP; NATURAL SCIENCES; low-field mobility; high-electron-mobility transistor; velocity saturation; quasi-ballistic charge carrier transport; two-dimensional electron gas; charge carrier scattering mechanisms; geometrical magnetoresistance; low noise and high frequency applications; velocity peak; graphene field-effect transistor; charge carrier trans- port;

    Sammanfattning : During the last decades, significant efforts have been made to exploit the excellent and promising electronic properties exhibited by field-effect transistors (FETs) with two-dimensional electron gas (2DEG) channels. The most prominent representatives of this class of devices are high-electron-mobility transistors (HEMTs) and graphene field-effect transistors (GFETs). LÄS MER

  5. 14. Vertical III-V Nanowire MOSFETs

    Författare :Olli-Pekka Kilpi; Nanoelektronik; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Nanowire; MOSFET; III-V; InGaAs; Vertical; Heterostructure; High frequency;

    Sammanfattning : Vertical III-V nanowire MOSFETs are interesting candidates for future digital and analog applications. High electron velocity III-V materials allow fabrication of low power and high frequency MOSFETs. Vertical vapor-liquid-solid growth enables fabrication of axial and radial heterostructure nanowires. LÄS MER

  7. 15. Electrolyte-Gated Organic Thin-Film Transistors

    Författare :Lars Herlogsson; Magnus Berggren; Hagen Klauk; Linköpings universitet; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Organic electronics; Thin-film transistor; Organic semiconductor; Polymer; Electrolyte; Polyelectrolyte; Electronics; Elektronik;

    Sammanfattning : There has been a remarkable progress in the development of organic electronic materials since the discovery of conducting polymers more than three decades ago. Many of these materials can be processed from solution, in the form as inks. LÄS MER