Sökning: "gate length"

Visar resultat 1 - 5 av 39 avhandlingar innehållade orden gate length.

  1. 1. Scaling of InGaAs/InAlAs and InAs/AlSb HEMTs for microwave/mm-wave applications

    Författare :Malin Borg; [2007]
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; metamorphic; InGaAs; gate length; pseudomorphic; InAs; AlSb; InP; Schottky layer; High electron mobility transistor HEMT ; drain bias;

    Sammanfattning : The InGaAs/InAlAs high electron mobility transistor (HEMT) offers the highest maximum frequency of oscillation fmax and the lowest noise performance (NFmin) for microwave/mm-wave receivers. Similar to other device technologies, the performance of the InGaAs/InAlAs HEMT has gradually been improved by device scaling. LÄS MER

  2. 2. Fabrication, characterization, and modeling of metallic source/drain MOSFETs

    Detta är en avhandling från Stockholm : KTH Royal Institute of Technology

    Författare :Valur Gudmundsson; Per-Erik Hellström; Yee-Chia Yeo; [2011]
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Metallic source drain; contact resistivity; Monte Carlo; NiSi; PtSi; SOI; UTB; tri-gate; FinFET; multiple-gate; nanowire; MOSFET; CMOS; Schottky barrier; silicide; SALICIDE;

    Sammanfattning : As scaling of CMOS technology continues, the control of parasitic source/drain (S/D) resistance (RSD) is becoming increasingly challenging. In order to control RSD, metallic source/drain MOSFETs have attracted significant attention, due to their low resistivity, abrupt junction and low temperature processing (≤700 °C). LÄS MER

  3. 3. Novel Processing and Electrical Characterization of Nanowires

    Detta är en avhandling från Stockholm : KTH Royal Institute of Technology

    Författare :Kristian Storm; [2013]
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Gate; Capacitance; Hall effect; InP; InAs; Characterization; Nanowires; Processing; LED; Transistor; Fysicumarkivet A:2013:Storm;

    Sammanfattning : This thesis investigates novel electrical nanowire characterization tools and devices. Conventional characterization methods, long available to bulk semiconductor samples, have been adapted and transferred to the nanowire geometry. LÄS MER

  4. 4. Growth, Physics, and Device Applications of InAs-based Nanowires

    Detta är en avhandling från Solid State Physics, Lund University

    Författare :Linus Fröberg; [2008]
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; field effect transistors; Low-dimensional structures; nanowires; chemical beam epitaxy; heterostructures; III-V; InP; InAs; quantum dots; gate all-around; wrap gate;

    Sammanfattning : This thesis is based on three different projects: 1) the epitaxial growth of nanowires using chemical beam epitaxy, 2) the study of electron transport through quantum dots and multiple quantum dots in nanowires at low temperature, and 3) the development of wrap gated nanowire field effect transistors. In the first part, a method of studying the diffusion of the source material on the substrate surface was developed. LÄS MER

  5. 5. Transport Studies of Local-Gate Defined Quantum Dots in Nanowires

    Detta är en avhandling från Solid State Physics

    Författare :Carina Fasth; [2007]
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Semiconductory physics; Fysik; Physics; quantum devices; nanowire; quantum dot; Halvledarfysik;

    Sammanfattning : This thesis focuses on electrical transport in semiconductor InAs nanowires grown by chemical beam epitaxy. Initially, transport length scales of homogeneous InAs n-type nanowires are characterized by low-temperature magnetoconductance measurements. The measurements show phase-coherent conductivity corrections. LÄS MER