Sökning: "gate all-around"

Visar resultat 1 - 5 av 14 avhandlingar innehållade orden gate all-around.

1. 1. All Around Logic Synthesis

   Författare :Maxim Teslenko; Hannu Tenhunen; Michel Berklaar; KTH; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; graph dominators; FPGA mapping; redundancy removal; RBN; Computer science; Datavetenskap;

   Sammanfattning : This dissertation is in the area of Computer-Aided Design (CAD) of digital Integrated Circuits (ICs). Today's digital ICs, such as microprocessors, memories, digital signal processors (DSPs), etc., range from a few thousands to billions of logic gates, flip-flops, and other components, packed in a few millimeters of area. LÄS MER

3. 2. Growth, Physics, and Device Applications of InAs-based Nanowires

   Författare :Linus Fröberg; Fasta tillståndets fysik; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; field effect transistors; Low-dimensional structures; nanowires; chemical beam epitaxy; heterostructures; III-V; InP; InAs; quantum dots; gate all-around; wrap gate;

   Sammanfattning : This thesis is based on three different projects: 1) the epitaxial growth of nanowires using chemical beam epitaxy, 2) the study of electron transport through quantum dots and multiple quantum dots in nanowires at low temperature, and 3) the development of wrap gated nanowire field effect transistors. In the first part, a method of studying the diffusion of the source material on the substrate surface was developed. LÄS MER

4. 3. Vertical III-V Nanowires For In-Memory Computing

   Författare :Saketh Ram Mamidala; Nanoelektronik; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; RRAM; 1T1R; gate all-around; MOSFET; III-V nanowire; In-memory computing;

   Sammanfattning : In recent times, deep neural networks (DNNs) have demonstrated great potential in various machine learning applications,such as image classification and object detection for autonomous driving. However, increasing the accuracy of DNNsrequires scaled, faster, and more energy-efficient hardware, which is limited by the von Neumann architecture whereseparate memory and computing units lead to a bottleneck in performance. LÄS MER

5. 4. Vertical III-V/High-k Nanowire MOS Capacitors and Transistors

   Författare :Jun Wu; Institutionen för elektro- och informationsteknik; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Nanowire; MOSFET; MOS capacitor; C-V; XPS; MOVPE; InGaAs; InAs; High-k; RF; Track-and-hold circuit;

   Sammanfattning : The emerging nanowire technology in recent years has attracted an increasing interest for high-speed, low-power electronics due to the possibility of a gate-all-around (GAA) geometry enabling aggressive gate length scaling, together with the ease in incorporating high-mobility narrow band gap III-V semiconductors such as InAs on Si substrates. These benefits make vertical nanowire transistors an attractive alternative to the planar devices. LÄS MER

7. 5. Studies of Nanowire Devices Enabled by Advanced Nanofabrication

   Författare :Gustav Nylund; Fasta tillståndets fysik; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Fysicumarkivet:2015:Nylund;

   Sammanfattning : This thesis explores the possibility of using advanced device geometries and heterostructure engineering to manipulate, control, and study the electrical and optical properties of semiconductor nanowires. The first part of the thesis investigates the use of different gate-all-around architectures for creating new types of gate-controlled nanowire devices, primarily intended for fundamental studies of semiconductor physics. LÄS MER