Sökning: "frequency dependence of resistance"

Visar resultat 1 - 5 av 21 avhandlingar innehållade orden frequency dependence of resistance.

1. 1. On the forced oscillation lung function test and its design for use in children

   Författare :Per-Håkan Aronsson; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; forced oscilliation; respiratory mechanics; averaging; lung function test; least squares method; respiratory resistance; upper airway shunting; respiratory reactance; frequency dependence of resistance;

   Sammanfattning : .... LÄS MER

3. 2. Choice of tRNA on Translating Ribosomes

   Författare :Elli Bouakaz; Måns Ehrenberg; Christian Spahn; Uppsala universitet; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Molecular biology; Ribosome; Translation; Accuracy; Proofreading; tRNA; Molekylärbiologi; Molecular biology; Molekylärbiologi;

   Sammanfattning : This thesis addresses different aspects of the question about accuracy of protein synthesis: i) the mechanism of tRNA selection during translation ii) study of ribosomal mutations that affect accuracy and iii) the choice of aminoacyl-tRNA isoacceptors on synonymous codons.By measuring the codon reading efficiencies of cognate and near-cognate ternary complexes we demonstrate that in optimal physiological conditions accuracy of substrate selection is much higher than previously reported; that during translation the ribosomal A site is not blocked by unspecific binding of the non-cognate tRNAs which would inhibit the speed of protein synthesis. LÄS MER

4. 3. Silicon Germanium heterojunction bipolar transistors : Large-signal modeling and low-frequency noise characterization aspects

   Författare :Staffan Bruce; Uppsala universitet; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Materials science; Silicon Germanium; SiGe; Heterojunction Bipolar Transistor; HBT; Large-signal modeling; thermal time constant; low-frequency noise: coherence; transimpedance amplifier; Materialvetenskap; Materials science; Teknisk materialvetenskap; Elektronik; Electronics;

   Sammanfattning : In this thesis, aspects of the Silicon Germanium (SiGe) Heterojunction Bipolar Transistor (HBT) are addressed. A physics-based electrical large-signal model including thermal dependence has been developed and is implemented using a commercially available simulator package. LÄS MER

5. 4. Diagnosis of the Lifetime Performance Degradation of Lithium-Ion Batteries : Focus on Power-Assist Hybrid Electric Vehicle and Low-Earth-Orbit Satellite Applications

   Författare :Shelley Brown; Göran Lindbergh; Robert Spotnitz; KTH; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; lithium-ion battery; LixNi0.8Co0.15Al0.05O2; LixMn2O4; LiyC6; ageing; three-electrode measurements; impedance modelling; surface film characterisation; hybrid electric vehicle; low-earth-orbit satellite; litiumjonbatteri; åldring; treelektroduppställning; impedansmodell; ytfilmskarakterisering; hybridfordon; satelliter; Electrochemistry; Elektrokemi;

   Sammanfattning : Lithium-ion batteries are a possible choice for the energy storage system onboard hybrid electric vehicles and low-earth-orbit satellites, but lifetime performance remains an issue. The challenge is to diagnose the effects of ageing and then investigate the dependence of the magnitude of the deterioration on different accelerating factors (e.g. LÄS MER

7. 5. Characterization of Microwave Transistors for Robust Receivers and High Efficiency Transmitters

   Författare :Mattias Thorsell; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; noise modeling; access resistance; self-heating; AlGaN GaN HEMT; thermal characterization; active load-pull; load modulation;

   Sammanfattning : The next generation of integrated transceiver front-ends needs both robustlow noise amplifiers and high power amplifiers on a single-chip. The AluminiumGallium Nitride / Gallium Nitride (AlGaN/GaN) High Electron MobilityTransistors (HEMT) is a suitable semiconductor technology for this purposedue to its high breakdown voltage and high electron mobility. LÄS MER