Sökning: "field-effect transistor FET"

Visar resultat 1 - 5 av 16 avhandlingar innehållade orden field-effect transistor FET.

1. 1. Analog Circuit Topology Development: Practice methods for technology and teaching based on comprehensible transistor models

   Författare :Roger Malmberg; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; episteme; analog design; circuit synthesis; field-effect transistor; teaching method; phronesis; techne; bipolar transistor; transistor model;

   Sammanfattning : To obtain adequate knowledge for design of robust analog circuits in industry, circuit engineers gain main knowledge from own practice experience, because theory taught by universities rarely states validity limits and result spreads. Therefore, when going from university to industry, the engineers find this theory nontrustworthy and relinquish it. LÄS MER

3. 2. Development of high temperature SiC based field effect sensors for internal combustion engine exhaust gas monitoring

   Författare :Helena Wingbrant; Anita Lloyd-Spetz; Karin Larsson; Linköpings universitet; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; field effect sensor; gas detection; selective catalytic reduction; lambda; cold start; ammonia; silicon carbide; engine exhaust.; Physics; Fysik;

   Sammanfattning : While the car fleet becomes increasingly larger it is important to lower the amounts of pollutants from each individual diesel or gasoline engine to almost zero levels. The pollutants from these engines predominantly originate from high NOx emissions and particulates, in the case when diesel is utilized, and emissions at cold start from gasoline engines. LÄS MER

4. 3. Microwave FET Modeling and Applications

   Författare :Christian Fager; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; MESFET; uncertainty; model; FMCW; statistical; HEMT; small-signal; extraction; distortion; intermodulation; CMOS; LDMOS; power amplifier; estimation; FET; large-signal; radar; AM noise;

   Sammanfattning : This thesis deals with three distinct topics within the areas of modeling, analysis and circuit design with microwave field effect transistors (FETs). First, the extraction of FET small-signal model parameters is addressed. LÄS MER

5. 4. Silicon nanowire based devices for More than Moore Applications

   Författare :Ganesh Jayakumar; Per-Erik Hellström; Mikael Östling; Luca Selmi; KTH; []
   Nyckelord :silicon nanowire; biosensor; CMOS; sequential integration; lab-on-chip; LOC; high-K; high-K integration on SiNW biosensor; ALD; fluid gate; back gate; SiNW; SiNW pixel matrix; FEOL; pattern transfer lithography; sidewall transfer lithography; STL; multi-target bio detection; BEOL; nanonets; silicon nanonets; SiNN-FET; SiNW-FET; CMOS integration of nanowires; CMOS integration of nanonets; monolithic 3D integration of nanowires; above-IC integration of nanowires; DNA detection using SiNW; SiNW biosensor; dry environment DNA detection; DNA hybridization detection using SiNW; SiNW functionalization; SiNW silanization; SiNW grafting; FEOL integration of SiNW; BEOL integration of SiNW; sequential multiplexed biodetection; biodetection efficiency of SiNW; front end of line integration of SiNW; back end of line integration of SiNW; SiNW dry environment functionalization; APTES cross-linker; accessing SiNW test site; fluorescence microscopy of SiNW; geometry of SiNW; SiNW biosensor variability; top-down fabrication of SiNW; bottom-up fabrication of SiNW; VLS method; ams foundry CMOS process; adding functionality in BEOL process; sensor integration in BEOL process; hafnium oxide; HfO2; aluminium oxide; Al2O3; TiN backgate; Nickel source drain; ISFET; ion sensitive field effect transistor; Overcoming Nernst limit of detection using SiNW; SiNW sub-threshold region operation; ASIC; SOC; SiGe selective epitaxy; epitaxial growth of SiNW; epitaxial growth of nanowires; epitaxial growth of nanonets; nickel silicide contacts; salicide process; high yield SiNW fabrication; high volume SiNW fabrication; silicon ribbon; SiRi pixel; SiRi biosensor; SiRi DNA detection; monolithic 3D integration of nanonets; above-IC integration of nanonets; impact of back gate voltage on silicon nanowire; impact of back gate voltage on SiNW; FDSOI; fully depleted silicon on insulator technology; metal backgate; wafer scale integration of SiNW; wafer scale integration of nanonets; impact of backgate voltage on CMOS inverter circuit; frequency divider; D flip-flop; Informations- och kommunikationsteknik; Information and Communication Technology;

   Sammanfattning : Silicon nanowires (SiNW) are in the spotlight for a few years in the research community as a good candidate for biosensing applications. This is attributed to their small dimensions in nanometer scale that offers high sensitivity, label-free detection and at the same time utilizing small amount of sample. LÄS MER

7. 5. Characterisation and modelling of graphene FET detectors for flexible terahertz electronics

   Författare :Xinxin Yang; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; sensors; arrays; scattering parameters; broadband characterisation; graphene; terahertz detectors; field-effect transistors; flexible electronics;

   Sammanfattning : Low-cost electronics for future high-speed wireless communication and non-invasive inspection at terahertz frequencies require new materials with advanced mechanical and electronic properties. Graphene, with its unique combination of flexibility and high carrier velocity, can provide new opportunities for terahertz electronics. LÄS MER