Sökning: "field effect device"

Visar resultat 1 - 5 av 225 avhandlingar innehållade orden field effect device.

1. 1. Resonant magnetic perturbation effect on the tearing mode dynamics : Novel measurements and modeling of magnetic fluctuation induced momentum transport in the reversed-field pinch

   Författare :Richard Fridström; Per Brunsell; Lorenzo Frassinetti; Tommaso Bolzonella; KTH; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; RFP; reversed-field pinch; tokamak; tearing mode; RMP; fusion; plasma; resonant magnetic perturbation; stochastic; magnetic; field; viscosity; mode; locking; Electrical Engineering; Elektro- och systemteknik;

   Sammanfattning : The tearing mode (TM) is a resistive instability that can arise in magnetically confined plasmas. The TM can be driven unstable by the gradient of the plasma current. When the mode grows it destroys the magnetic field symmetry and reconnects the magnetic field in the form of a so-called magnetic island. LÄS MER

3. 2. Electronic Sensors Based on Nanostructured Field-Effect Devices

   Författare :Si Chen; Shili Zhang; Jan Linnros; Christian Schönenberger; Uppsala universitet; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; biosensor; field-effect transistor; nanowire; ISFET; Elektronik; Electronics;

   Sammanfattning : Point-of-care (POC) diagnostics presents a giant market opportunity with profound societal impact. In particular, specific detection of DNA and protein markers can be essential for early diagnosis of e.g. cancer, cardiovascular disease, infections or allergies. LÄS MER

4. 3. Heterostructure Field Effect Transistors and Millimeter Wave Integrated Circuits

   Författare :Niklas Rorsman; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; subharmonic; resistive mixer; Modulation Doped Field Effect Transistor MODFET ; heterostructure field effect transistor HFET ; monolithic microwave integrated circuits MMIC ; frequency multiplier; amplifier; III-V semiconductor; small signal model; electron beam lithography; High Electron Mobility Transistor HEMT ; large signal model; pseudomorphic;

   Sammanfattning : This thesis deals with the research and development of HFETs and HFET based circuits. One of the main aims of the work presented in this thesis has been to develop processes to fabricate state of the art devices and circuits. LÄS MER

5. 4. Silicon Nanowire Field-Effect Devices as Low-Noise Sensors

   Författare :Xi Chen; Zhen Zhang; Shi-Li Zhang; Si Chen; Fengnian Xia; Uppsala universitet; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon nanowire; field-effect transistor; Schottky junction gate; low frequency noise; ion sensor; Teknisk fysik med inriktning mot elektronik; Engineering Science with specialization in Electronics;

   Sammanfattning : In the past decades, silicon nanowire field-effect transistors (SiNWFETs) have been explored for label-free, highly sensitive, and real-time detections of chemical and biological species. The SiNWFETs are anticipated for sensing analyte at ultralow concentrations, even at single-molecule level, owing to their significantly improved charge sensitivity over large-area FETs. LÄS MER

7. 5. Simulation and Optimization of SiC Field Effect Transistors

   Författare :Kent Bertilsson; Hans-Erik Nilsson; Christian Brylinski; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Electronics; SiC; Device simulation; RF; power; MESFET; Elektronik; Electronics; Elektronik;

   Sammanfattning : Silicon Carbide (SiC) is a wide band-gap semiconductor material with excel-lent material properties for high frequency, high power and high temperature elec-tronics. In this work different SiC field-effect transistors have been studied using theoretical methods, with the focus on both the devices and the methods used. LÄS MER