Sökning: "epitaxial silicide"

Visar resultat 1 - 5 av 10 avhandlingar innehållade orden epitaxial silicide.

1. 1. Synthesis and In Situ ToF-LEIS Analysis of Ultrathin Silicides and Ti-based Films

   Författare :Philipp Mika Wolf; Daniel Primetzhofer; Zhen Zhang; Eduardo Pitthan; Tuan Thien Tran; Anders Hallén; Uppsala universitet; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; ion scattering; in situ characterization; nickel silicide; ultrathin metal silicide; epitaxial silicide; surface analysis; titanium based films; high-resolution depth profiling;

   Sammanfattning : Thin films and coatings play a significant role in today’s society, with applications in electronics, optics, mechanics, and biomedicine. Further advancement in the field of surface coatings requires a good understanding of the unique features of ultrathin films and surfaces, which can only be reached with analysis techniques capable of resolving composition and morphology on a sub-nm scale. LÄS MER

3. 2. Silicon nanowire based devices for More than Moore Applications

   Författare :Ganesh Jayakumar; Per-Erik Hellström; Mikael Östling; Luca Selmi; KTH; []
   Nyckelord :silicon nanowire; biosensor; CMOS; sequential integration; lab-on-chip; LOC; high-K; high-K integration on SiNW biosensor; ALD; fluid gate; back gate; SiNW; SiNW pixel matrix; FEOL; pattern transfer lithography; sidewall transfer lithography; STL; multi-target bio detection; BEOL; nanonets; silicon nanonets; SiNN-FET; SiNW-FET; CMOS integration of nanowires; CMOS integration of nanonets; monolithic 3D integration of nanowires; above-IC integration of nanowires; DNA detection using SiNW; SiNW biosensor; dry environment DNA detection; DNA hybridization detection using SiNW; SiNW functionalization; SiNW silanization; SiNW grafting; FEOL integration of SiNW; BEOL integration of SiNW; sequential multiplexed biodetection; biodetection efficiency of SiNW; front end of line integration of SiNW; back end of line integration of SiNW; SiNW dry environment functionalization; APTES cross-linker; accessing SiNW test site; fluorescence microscopy of SiNW; geometry of SiNW; SiNW biosensor variability; top-down fabrication of SiNW; bottom-up fabrication of SiNW; VLS method; ams foundry CMOS process; adding functionality in BEOL process; sensor integration in BEOL process; hafnium oxide; HfO2; aluminium oxide; Al2O3; TiN backgate; Nickel source drain; ISFET; ion sensitive field effect transistor; Overcoming Nernst limit of detection using SiNW; SiNW sub-threshold region operation; ASIC; SOC; SiGe selective epitaxy; epitaxial growth of SiNW; epitaxial growth of nanowires; epitaxial growth of nanonets; nickel silicide contacts; salicide process; high yield SiNW fabrication; high volume SiNW fabrication; silicon ribbon; SiRi pixel; SiRi biosensor; SiRi DNA detection; monolithic 3D integration of nanonets; above-IC integration of nanonets; impact of back gate voltage on silicon nanowire; impact of back gate voltage on SiNW; FDSOI; fully depleted silicon on insulator technology; metal backgate; wafer scale integration of SiNW; wafer scale integration of nanonets; impact of backgate voltage on CMOS inverter circuit; frequency divider; D flip-flop; Informations- och kommunikationsteknik; Information and Communication Technology;

   Sammanfattning : Silicon nanowires (SiNW) are in the spotlight for a few years in the research community as a good candidate for biosensing applications. This is attributed to their small dimensions in nanometer scale that offers high sensitivity, label-free detection and at the same time utilizing small amount of sample. LÄS MER

4. 3. Integration of epitaxial SiGe(C) layers in advanced CMOS devices

   Författare :Julius Hållstedt; Henry Radamson; Eugene A. Fitzgerald; KTH; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Silicon Germanium Carbon SiGeC ; Chemical Vapor Deposition CVD ; Epitaxy; Pattern Dependency; MOSFET; Mobility; Spacer Gate Technology; Semiconductor physics; Halvledarfysik;

   Sammanfattning : Heteroepitaxial SiGe(C) layers have attracted immense attention as a material for performance boost in state of the art electronic devices during recent years. Alloying silicon with germanium and carbon add exclusive opportunities for strain and bandgap engineering. LÄS MER

5. 4. Device design and process integration for SiGeC and Si/SOI bipolar transistors

   Författare :Erik Haralson; KTH; []
   Nyckelord :Silicon-Germanium SiGe ; SiGeC; heterojunction bipolar transistor HBT ; nickel silicide; selectively implanted collector SIC ; device simulation; SiGeC layer staiblity; high resolution x-ray diffraction HRXRD ; silicon-on.insulator SOI ; self-heating;

   Sammanfattning : SiGe is a significant enabling technology for therealization of integrated circuits used in high performanceoptical networks and radio frequency applications. In order tocontinue to fulfill the demands for these applications, newmaterials and device structures are needed. LÄS MER

7. 5. Source and drain engineering in SiGe-based pMOS transistors

   Författare :Christian Isheden; Mikael Östling; Simon Deleonibus; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Electronics; SiGe; source drain; shallow junctions; pMOS; process integration; CVD; epitaxy; etching; Ni silicide; contact resistivity; Elektronik; Electronics; Elektronik;

   Sammanfattning : A new shallow junction formation process, based on selective silicon etching followed by selective growth of in situ B-doped SiGe, is presented. The approach is advantageous compared to conventional ion implantation followed by thermal activation, because perfectly abrupt, low resistivity junctions of arbitrary depth can be obtained. LÄS MER