Sökning: "epitaxial lateral overgrowth"

Visar resultat 6 - 10 av 12 avhandlingar innehållade orden epitaxial lateral overgrowth.

  1. 6. Aberration-Corrected Analytical Electron Microscopy of Transition Metal Nitride and Silicon Nitride Multilayers

    Författare :Amie Fallqvist; Per Persson; Lars Hultman; Linköpings universitet; []
    Nyckelord :;

    Sammanfattning : Two multilayer thin films have been studied: TiN/SiNx and ZrN/SiNx. A double-corrected transmission electron microscope (TEM) was utilized for imaging and spectroscopy. Imaging was carried out in scanning mode (STEM) for all samples. LÄS MER

  3. 7. UHV-CVD growth of Ge/Si nanostructures

    Författare :Vilma Zela; Fasta tillståndets fysik; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Semiconductory physics; Fysik; Physics; Naturvetenskap; Si; Ge; Esaki diode; Halvledarfysik; Ge layer; Natural science; Ge Ilands; posiotioning;

    Sammanfattning : This thesis is based on the results concerning the epitaxial growth and characterization of silicon (Si) and germanium (Ge) nanostructures. The growth technique was the Ultra High Vacuum Chemical Vapor Deposition (UHV-CVD) that works in relatively low temperatures and low growth pressures. LÄS MER

  4. 8. Leveraging HVPE for III-V/Si Integration and Mid-Infrared Photonic Device Fabrication

    Författare :Axel Strömberg; Yan-Ting Sun; Sebastian Lourdudoss; Mattias Hammar; Charles Cornet; KTH; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; HVPE; III-V Si; Photovoltaics; PEC; MIR; non-linear optics; QPM; QCL; Energiteknik; Energy Technology;

    Sammanfattning : This work covers the implementation of highly specialized epitaxial techniques enabled by the near-equilibrium hydride vapor-phase epitaxy growth process in III-V/Si integration for Si-based tandem solar cells and photoelectrochemical reactions, quasi phase matching GaP structures on GaAs substrates, and regrowth of InP:Fe on quantum cascade lasing structures.III-V/Si integration is an important topic in several fields of research with a significant one being solar energy harvesting. LÄS MER

  5. 9. High Quality III-V Semiconductors/Si Heterostructures for Photonic Integration and Photovoltaic Applications

    Författare :Himanshu Kataria; Sebastian Lourdudoss; Matty Caymax; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY;

    Sammanfattning : This thesis deals with one of the promising strategies to monolithically integrate III-V semiconductors with silicon via epitaxial lateral overgrowth (ELOG) technology and is supported by extensive experimental results. The aimed applications are light sources on silicon for electronics-photonics integration and cost effective high efficiency multijunction solar cells. LÄS MER

  7. 10. Selective Epitaxy of Indium Phosphide and Heteroepitaxy of Indium Phosphide on Silicon for Monolithic Integration

    Författare :Fredrik Olsson; Sebastian Lourdudoss; Shigeya Naritsuka; KTH; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Semiconductor Physics; Semiconductor physics; Halvledarfysik;

    Sammanfattning : A densely and monolithically integrated photonic chip on indium phosphide is greatly in need for data transmission but the present day’s level of integration in InP is very low. Silicon enjoys a unique position among all the semiconductors in its level of integration. LÄS MER