Sökning: "enhanced spontaneous emission"

Hittade 4 avhandlingar innehållade orden enhanced spontaneous emission.

  1. 1. Theory of inelastic tunneling : applications to double-barrier structures and scanning tunneling microscopes

    Författare :Peter Johansson; Chalmers tekniska högskola; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; inelastic tunneling; localized plasmon; resonant tunneling; scanning tunneling microscope; multi-photon process; enhanced spontaneous emission;

    Sammanfattning : .... LÄS MER

  3. 2. Determination of binary fission-fragment yields in the reaction 251Cf(nth, f) and Verification of nuclear reaction theory predictions of fission-fragment distributions in the reaction 238U(n, f)

    Författare :Evert Birgersson; Andreas Oberstedt; Stephan Oberstedt; Nicolae Carjan; Örebro universitet; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; nuclear reactions; mass energy distributions; fission modes; fission-fragment spectroscopy; 251Cf nth; f ; 238U n; f ; Physics; Fysik; Fysik; Physics;

    Sammanfattning : Neutron-induced fission has been studied at different excitation energies of the compound nucleus by measurements on the two fissioning systems, 252Cf* and 239U*.For the first time, the light fission fragment yields from the reaction 251Cf(nth, f) have been measured with high resolution. LÄS MER

  4. 3. Towards Single-Ion Detection and Single-Photon Storage in Rare-Earth-Ion-Doped Crystals

    Författare :Mohammed Alqedra; NanoLund: Centre for Nanoscience; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Single-ion detection; microcavities; quantum memory; rare-earth-ion-doped crystals; Fysicumarkivet A:2022:Alqedra;

    Sammanfattning : Solid materials doped with rare-earth ions are considered an attractive platform for quantum information applications. One of the main reasons for this is the exceptionally long optical and hyperfine coherence times of the 4fn states, due to the shielding provided by the outer lying 5s and 5p electrons. LÄS MER

  5. 4. Growth and characterization of SiC and GaN

    Författare :Rafal Ciechonski; Erik Janzén; Sebastian Lourdudoss; Linköpings universitet; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; SiC; GaN; Deep level transient spectroscopy; Minority Carrier Transient Spectroscopy; Hall effect; Cathodoluminescence; Scanning electron microscopy; Atomic Force microscopy; sublimation growth; MOCVD; heterostructures; High Electron Mobility transistor; point defects; Material physics with surface physics; Materialfysik med ytfysik;

    Sammanfattning : At present, focus of the SiC crystal growth development is on improving the crystalline quality without polytype inclusions, micropipes and the occurrence of extended defects. The purity of the grown material, as well as intentional doping must be well controlled and the processes understood. LÄS MER