Sökning: "electron mobility"
Visar resultat 21 - 25 av 189 avhandlingar innehållade orden electron mobility.
21. Heterostructure Field Effect Transistors and Millimeter Wave Integrated Circuits
Sammanfattning : This thesis deals with the research and development of HFETs and HFET based circuits. One of the main aims of the work presented in this thesis has been to develop processes to fabricate state of the art devices and circuits. LÄS MER
22. Electron transfer and fragmentation in fullerene collisions
Sammanfattning : In this thesis, we present results from detailed gas phase studies of intrinsic properties of fullerenes (C60) and clusters of fullerenes as probed by slow multiply charged (atomic or cluster) ions in combination with coincidence time-of-flight mass spectrometry. We have investigated the structures, stabilities, and the electron mobilities of multiply charged clusters of fullerenes, (C60)nr+ (r=2-5). LÄS MER
23. Design and Fabrication of InP High Electron Mobility Transistors for Cryogenic Low-Noise Amplifiers
Sammanfattning : High electron mobility transistor (InP HEMT) cryogenic low noise amplifiers (LNAs) have made significant improvements in noise and gain following decades of development. Applications are found from radio astronomy to quantum computing. LÄS MER
24. Electron-Lattice Dynamics in pi-Conjugated Systems
Sammanfattning : In this thesis we explore in particular the dynamics of a special type of quasi-particle in pi-conjugated materials termed polaron, the origin of which is intimately related to the strong interactions between the electronic and the vibrational degrees of freedom within these systems. In order to conduct such studies with the particular focus of each appended paper, we simultaneously solve the time-dependent Schrödinger equation and the lattice equation of motion with a three-dimensional extension of the famous Su-Schrieffer-Heeger (SSH) model Hamiltonian. LÄS MER
25. Electron paramagnetic resonance study of defects in SiC
Sammanfattning : Silicon carbide (SiC) is a wide bandgap semiconductor (energy gap of 3.26 eV and 3.03 eV for 4Hand 6H-SiC, respectively). With outstanding physical and electronic properties, SiC is a promising material for high-power, high-frequency and high-temperature applications. LÄS MER