Sökning: "electron mobility"
Visar resultat 1 - 5 av 176 avhandlingar innehållade orden electron mobility.
1. Monte Carlo simulation of electron transport in semiconducting zigzag carbon nanotubes
Sammanfattning : Since the advent of nanoscale material based electronic devices, there has been a considerable interest in exploring carbon nanotubes from fundamental science and technological perspectives. In carbon nanotubes, the atoms form a cylindrical structure with a diameter of the order 1nm. LÄS MER
2. Electron Transport in Low Dimensional Systems
Sammanfattning : This thesis consists of experimental studies of transport properties in high mobility two dimensional electron gases (2DEGs). Two material systems are used, an AlGaAs/GaAs heterojunction and a GaInAs/InP quantum well. LÄS MER
3. Electron-lattice dynamics in π-conjugated systems
Sammanfattning : The work presented in this thesis concerns the dynamics in π-conjugated hydrocarbon systems. Due to the molecular bonding structure of these systems there exists a coupling between the electronic system and the phonons of the lattice. LÄS MER
4. Model Studies of Electron Transfer and Reaction Dynamics at Surfaces
Sammanfattning : Charge-transfer is of key importance in many physical, chemical and biological processes, including surface reactions. This thesis consists of several theories for and model studies of surface reactions that are initiated by electron transfer between the surface to a molecule. LÄS MER
5. Low-frequency noise characterization, evaluation and modeling of advanced Si- and SiGe-based CMOS transistors
Sammanfattning : A wide variety of novel complementary-metal-oxide-semiconductor (CMOS) devices that are strong contenders for future high-speed and low-noise RF circuits have been evaluated by means of static electrical measurements and low-frequency noise characterizations in this thesis. These novel field-effect transistors (FETs) include (i) compressively strained SiGe channel pMOSFETs, (ii) tensile strained Si nMOSFETs, (iii) MOSFETs with high-k gate dielectrics, (iv) metal gate and (v) silicon-on-insulator (SOI) devices. LÄS MER
