Sökning: "electron energy-loss spectroscopy"
Visar resultat 1 - 5 av 35 avhandlingar innehållade orden electron energy-loss spectroscopy.
Sammanfattning : This thesis investigates the possibilities of using planar silicon-devices such as the photodiode array and the charge-coupled device (CCD) as directly exposed electron-detectors for electron energy-loss spectroscopy. The aim is to achieve an acceptable performance at low signal intensities, enabling single electron detection. LÄS MER
Sammanfattning : This Licentiate Thesis covers experimental and theoretical investigations of the bulk plasmon response to different compositions and strain states of group III-nitride materials. Investigated materials were grown using magnetron sputtering epitaxy and metal organic chemical vapour deposition and studied by Rutherford backscattering spectrometry, X-ray diffraction, electron microscopy and electron energy loss spectroscopy (EELS). LÄS MER
Sammanfattning : This doctorate thesis covers both experimental and theoretical investigations of the optical responses of the group III-nitrides (AlN, GaN, InN) and their ternary alloys. The goal of this research has been to explore the usefulness of valence electron energy loss spectroscopy (VEELS) for materials characterization of group III-nitride semiconductors at the nanoscale. LÄS MER
Sammanfattning : During recent years, new types of materials have been discovered with unique properties. One family of such materials are two-dimensional materials, which include graphene and MXene. These materials are stronger, more flexible, and have higher conductivity than other materials. As such they are highly interesting for new applications, e. LÄS MER
5. Towards atomically resolved magnetic measurements in the transmission electron microscope : A study of structure and magnetic moments in thin films
Sammanfattning : The magnetic properties of thin metallic films are significantly different from the bulk properties due to the presence of interfaces. The properties shown by such thin films are influenced by the atomic level structure of the films and the interfaces. LÄS MER