Sökning: "electrochemical etching of silicon"

Visar resultat 6 - 10 av 12 avhandlingar innehållade orden electrochemical etching of silicon.

  1. 6. Development of Nanoimprint Lithography for Fabrication of Electrochemical Transducers

    Författare :Marc Beck; Fasta tillståndets fysik; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; electrochemistry; interdigitated array; anti-adhesion; anti-sticking; stamp; mold; monolayer deposition; Fysik; post-imprint processes; Physics; transducer; nanoimprint lithography; sensor; Fysicumarkivet A:2003:Beck;

    Sammanfattning : This thesis gives an overview about the current status of nanoimprint lithography, a relatively new nanofabrication tool. The technology is capable for parallel mass production of nm-structured features having a resolution below 10 nm and is usable with high throughput on full wafer scale. LÄS MER

  3. 7. Silicon Nanowires for Biomolecule Detection

    Författare :Niklas Elfström; Jan Linnros; Mark Reed; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Material physics with surface physics; Materialfysik med ytfysik;

    Sammanfattning : Starting from silicon on insulator (SOI) material, with a top silicon layer thickness of 100 nm, silicon nanowires were fabricated in a top down approach using electron beam (e-beam) lithography and subsequent eactive ion etching (RIE) and oxidation. Nanowires as narrow as 30 nm could be achieved. LÄS MER

  4. 8. Development of macropore arrays in silicon and related technologies for X-ray imaging applications

    Författare :Xavier Badel; KTH; []
    Nyckelord :;

    Sammanfattning : Digital devices have started to replace photographic film inX-ray imaging applications. As compared to photographic films,these devices are more convenient to obtain images and tohandle, treat and store these images. LÄS MER

  5. 9. Light emitting devices based on silicon nanostructures

    Författare :Nenad Lalic; KTH; []
    Nyckelord :;

    Sammanfattning : Although silicon is the dominant semiconductor today, lightemitting devices are currently based on compound semiconductorsdue to their direct band-gap, which promotes fast radiativerecombination. However, in nanometer-size silicon structures,carrier confinement enhances the radiative recombination,while, at the same time, suppresses diffusion to non-radiativerecombination centra, resulting in a significant increase inlight emission efficiency. LÄS MER

  7. 10. Electrochemically etched pore arrays in silicon for X-ray imaging detectors

    Författare :Xavier Badel; Jan Linnros; Volker Lehmann; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Electrophysics; Elektrofysik; Electrophysics; Elektrofysik;

    Sammanfattning : Digital devices have now been introduced in many X-ray imaging applications, replacing slowly traditional photographic films. These devices are preferred as they offer real time imaging, easy handling and fast treatment of the images. LÄS MER