Sökning: "deep-ultraviolet"

Visar resultat 1 - 5 av 17 avhandlingar innehållade ordet deep-ultraviolet.

  1. 1. Elements of AlGaN-Based Light Emitters

    Författare :Martin Stattin; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; graphene; vertical cavity surface emitting laser; deep-ultraviolet; III-nitride; near-infrared; light emitting diode; visible; AlGaN; quantum cascade laser;

    Sammanfattning : The III-nitrides have enabled a range of optoelectronic devices and associated applications of great industrial and societal importance. However, the full potential of the III-nitrides remains to be explored. LÄS MER

  3. 2. Towards Novel AlGaN-Based Light Emitters

    Författare :Martin Stattin; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; AlGaN; light emitting diode; deep ultraviolet; III-Nitrides; near infrared; quantum cascade laser;

    Sammanfattning : The unique properties of the AlGaN semiconductors make them a suitable choice for optoelectronic devices at both short and long wavelengths, based on interband and intersubband transitions, respectively. What sets AlGaN apart from other wide-bandgap semiconductors is the possibility to obtain both p- and n-type conductivity as well as the direct bandgap. LÄS MER

  4. 3. Optical properties and degradation of deep ultraviolet AIGaN-based light-emitting diodes

    Författare :Andrea Pinos; Saulius Marcinkevicius; Andreas Hangleiter; KTH; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; AIGaN; deep-UV LEDs; polarization fields; screening; exciton binding energy; alloy fluctuations; near-field microscopy; carrier dynamics; LED aging; Optics; Optik;

    Sammanfattning : .... LÄS MER

  5. 4. Doping of high-Al-content AlGaN grown by MOCVD

    Författare :Daniel Nilsson; Anelia Kakanakova- Georgieva; Erik Janzén; Michelle Moram; Linköpings universitet; []
    Nyckelord :;

    Sammanfattning : The high-Al-content AlxGa1-xN, x > 0.70, is the principal wide-band-gap alloy system to enable the development of light-emitting diodes operating at the short wavelengths in the deep-ultraviolet, λ < 280 nm. LÄS MER

  7. 5. Localization effects in ternary nitride semiconductors

    Författare :Vytautas Liuolia; Saulius Marcinkevicius; Toshiharu Saiki; KTH; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; NATURVETENSKAP; NATURAL SCIENCES; AlGaN; InGaN; AlInN; LEDs; near-field microscopy; carrier dynamics; alloy fluctuations; carrier localization; built-in electric field; nonpolar planes; polarized luminescence;

    Sammanfattning : InGaN based blue and near-ultraviolet light emitting diodes and laser diodes have been successfully commercialized for many applications such as general lighting, display backlighting and high density optical storage devices. Despite having a comparably high defect density, these devices are known for their efficient operation, which is attributed to localization in potential fluctuations preventing carriers from reaching the centers of nonradiative recombination. LÄS MER