Sökning: "deep-level transient spectroscopy"

Visar resultat 1 - 5 av 19 avhandlingar innehållade orden deep-level transient spectroscopy.

  1. 1. Growth and characterization of SiC and GaN

    Författare :Rafal Ciechonski; Erik Janzén; Sebastian Lourdudoss; Linköpings universitet; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; SiC; GaN; Deep level transient spectroscopy; Minority Carrier Transient Spectroscopy; Hall effect; Cathodoluminescence; Scanning electron microscopy; Atomic Force microscopy; sublimation growth; MOCVD; heterostructures; High Electron Mobility transistor; point defects; Material physics with surface physics; Materialfysik med ytfysik;

    Sammanfattning : At present, focus of the SiC crystal growth development is on improving the crystalline quality without polytype inclusions, micropipes and the occurrence of extended defects. The purity of the grown material, as well as intentional doping must be well controlled and the processes understood. LÄS MER

  3. 2. Capacitance Spectroscopy of Point Defects in Silicon and Silicon Carbide

    Författare :Denny Åberg; KTH; []
    Nyckelord :capacitance spectrocopy; deep levels; deep level transient spectroscopy; thermal donors; thermal double donors; ultra shallow thermal donors; chemical kinetics; silicon carbide; ion implantation; implantation induced defects; implantation induced pas;

    Sammanfattning : .... LÄS MER

  4. 3. Optical Studies of InAs Quantum Dots in III-V Semiconductors

    Författare :Lars Landin; Fasta tillståndets fysik; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; quantum dots; III-V semiconductors; k.p calculations; photoluminescence; deep-level transient spectroscopy; photoconductivity; few particle effect; single dot spectroscopy; InAs InP; Semiconductory physics; Halvledarfysik; Fysicumarkivet A:2000:Landin; InAs GaAs;

    Sammanfattning : I this thesis, optical studies of InAs quantum dots (QDs) in GaAs and InP are presented. The electronic structure of these zero dimensional structures, grown in the Stranski-Krastanow growth mode, was studied by photoluminescence spectroscopy (PL), junction space-charge techniques (JSCT) and photoconductivity (PC) measurements. LÄS MER

  5. 4. The influence of process-induced defects on electrical properties of silicon junctions

    Författare :Gert I. Andersson; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; tunneling; ; silicon emitter junctions; discrete conductance fluctuation; shallow doping; deep-level transient spectroscopy;

    Sammanfattning : .... LÄS MER

  7. 5. Detection and removal of traps at the SiO2/SiC interface

    Författare :Halldor Olafsson; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; interface states; thermally stimulated current TSC ; positron annihilation spectroscopy PAS ; silicon carbide SiC ; metal-oxide-semiconductor field-effect transistor MOSFET ; transmission electron microscopy TEM ; deep level transient spectroscopy DLTS ; metal-oxide-semiconductor MOS ; field-effect mobility; capacitance-voltage C-V ;

    Sammanfattning : The interface between silicon dioxide (SiO2) and silicon carbide (SiC) is at the heart of the SiC metal-oxide-semiconductor field-effect (MOSFET) transistor. The technology to produce a high quality SiO2/SiC interface does not exist today, hampering further development of the SiC MOSFET. LÄS MER