Sökning: "deep level transient spectroscopy DLTS"

Visar resultat 1 - 5 av 14 avhandlingar innehållade orden deep level transient spectroscopy DLTS.

1. 1. Electrical Properties of Gold-related Defect Complexes in Silicon

   Författare :Einar Sveinbjörnsson; Chalmers tekniska högskola; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; DLTS; gettering; Au in Si; lithium diffusion; Au-H complexes; Au-Li complexes; deep levels; phosphorus diffusion; hydrogen in silicon;

   Sammanfattning : This thesis describes three extensive experiments concerning the properties of gold as an impurity atom in crystalline silicon. The first study is an investigation of the effect of phosphorus diffusion on the distribution of gold atoms within a silicon crystal. LÄS MER

3. 2. Growth and characterization of SiC and GaN

   Författare :Rafal Ciechonski; Erik Janzén; Sebastian Lourdudoss; Linköpings universitet; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; SiC; GaN; Deep level transient spectroscopy; Minority Carrier Transient Spectroscopy; Hall effect; Cathodoluminescence; Scanning electron microscopy; Atomic Force microscopy; sublimation growth; MOCVD; heterostructures; High Electron Mobility transistor; point defects; Material physics with surface physics; Materialfysik med ytfysik;

   Sammanfattning : At present, focus of the SiC crystal growth development is on improving the crystalline quality without polytype inclusions, micropipes and the occurrence of extended defects. The purity of the grown material, as well as intentional doping must be well controlled and the processes understood. LÄS MER

4. 3. Deep levels in SiC

   Författare :Franziska C. Beyer; Erik Janzén; Carl Hemmingsson; Jörg Weber; Linköpings universitet; []
   Nyckelord :NATURAL SCIENCES; NATURVETENSKAP;

   Sammanfattning : Silicon carbide (SiC) has been discussed as a promising material for high power bipolar devices for almost twenty years. Advances in SiC crystal growth especially the development of chemical vapor deposition (CVD) have enabled the fabrication of high quality material. LÄS MER

5. 4. Detection and removal of traps at the SiO2/SiC interface

   Författare :Halldor Olafsson; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; interface states; thermally stimulated current TSC ; positron annihilation spectroscopy PAS ; silicon carbide SiC ; metal-oxide-semiconductor field-effect transistor MOSFET ; transmission electron microscopy TEM ; deep level transient spectroscopy DLTS ; metal-oxide-semiconductor MOS ; field-effect mobility; capacitance-voltage C-V ;

   Sammanfattning : The interface between silicon dioxide (SiO2) and silicon carbide (SiC) is at the heart of the SiC metal-oxide-semiconductor field-effect (MOSFET) transistor. The technology to produce a high quality SiO2/SiC interface does not exist today, hampering further development of the SiC MOSFET. LÄS MER

7. 5. Carrier Lifetime Relevant Deep Levels in SiC

   Författare :Ian Don Booker; Einar Sveinbjörnsson; Erik Janzén; Anthony Peaker; Linköpings universitet; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Silicon carbide; Deep level transient spectroscopy; Deep level; Carrier lifetime; Time-resolved photoluminescence;

   Sammanfattning : Silicon carbide (SiC) is currently under development for high power bipolar devices such as insulated gate bipolar transistors (IGBTs). A major issue for these devices is the charge carrier lifetime, which, in the absence of structural defects such as dislocations, is influenced by point defects and their associated deep levels. LÄS MER