Sökning: "cryogenic temperature"
Visar resultat 1 - 5 av 63 avhandlingar innehållade orden cryogenic temperature.
1. InP High Electron Mobility Transistor Design for Cryogenic Low Noise Amplifiers
Sammanfattning : The InGaAs/InAlAs/InP high electron mobility transistor (InP HEMT) is the superior technology for the most demanding low-noise and high-speed microwave and millimeter-wave applications, in particular in radio astronomy and deep-space communication. InP HEMT has enabled cryogenic low noise amplifier (LNA) designs with noise temperatures about ten times the quantum noise limit from sub GHz up to 120 GHz. LÄS MER
2. InP High Electron Mobility Transistors for Cryogenic Low-Noise and Low-Power Amplifiers
Sammanfattning : The InAlAs/InGaAs/InP high-electron mobility transistor (InP HEMT) is the preferred low-noise device in cryogenic low-noise amplifiers (LNAs) operating at 5-15 K. Such LNAs are utilized in microwave and millimeter-wave detection in radio astronomy. LÄS MER
3. Design and Fabrication of InP High Electron Mobility Transistors for Cryogenic Low-Noise Amplifiers
Sammanfattning : High electron mobility transistor (InP HEMT) cryogenic low noise amplifiers (LNAs) have made significant improvements in noise and gain following decades of development. Applications are found from radio astronomy to quantum computing. LÄS MER
4. Ultra-Low Noise InP HEMTs for Cryogenic Amplification
Sammanfattning : InGaAs/InAlAs/InP High Electron Mobility Transistors (InP HEMTs), are today the best devices to design cryogenic low noise amplifiers. However, reported progress in reducing the noise has been slow in the last decade. LÄS MER
5. InAs/AlSb HEMTs for Cryogenic Low-Noise Applications
Sammanfattning : The InAs/AlSb high electron mobility transistor (HEMT) is an emerging microwave device technology. The high electron mobility and high peak electron velocity of the InAs channel makes this device technology a potential candidate for low-noise applications operating at very low power dissipation. LÄS MER