Sökning: "cryogenic amplifier"

Visar resultat 6 - 10 av 17 avhandlingar innehållade orden cryogenic amplifier.

  1. 6. Ultra-Low Noise InP HEMTs for Cryogenic Amplification

    Författare :Joel Schleeh; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; cryogenic; DC power dissipation; MMIC; LNA; InP HEMT; ALD;

    Sammanfattning : InGaAs/InAlAs/InP High Electron Mobility Transistors (InP HEMTs), are today the best devices to design cryogenic low noise amplifiers. However, reported progress in reducing the noise has been slow in the last decade. LÄS MER

  3. 7. THz Vector Beam Measurement System for APEX Instrument SHeFI and Microwave Cryogenic Low Noise Amplifier Design

    Författare :Olle Nyström; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; vector measurements; mm- and submm-wave optics; LNA; radio astronomy; cryogenic amplifier; APEX; InP HEMT; Gaussian beam;

    Sammanfattning : This licentiate thesis describes results of the author’s work on development of THz vector beam measurement system and microwave cryogenic low-noise amplifier.The first part, and the main focus, of the thesis covers the vector beam measurement system for frequency range 210-500 GHz developed to characterize/verify the cold opticsof the APEX instrument SHeFI. LÄS MER

  4. 8. InP DHBT Amplifiers and Circuit Packaging up to Submillimeter-Wave Frequencies

    Författare :Klas Eriksson; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; InP; WR05; packaging; noise figure; substrate modes; WR03.; multiple layer interconnect; double heterojunction bipolar transistor DHBT ; G-band; wideband; H-band; waveguide transition; distributed amplifier DA ; millimeter-wave; amplifier; low-noise amplifier LNA ; membrane technology; waveguide module; submillimeter-wave;

    Sammanfattning : This thesis treats the design and characterization of amplifiers operating up tosubmillimeter-wave frequencies and packaging of such circuits into waveguidemodules. The circuits use an advanced indium phosphide (InP) double heterojunctionbipolar transistor (DHBT) process with a multilayer back-end. LÄS MER

  5. 9. InP High Electron Mobility Transistor Design for Cryogenic Low Noise Amplifiers

    Författare :Eunjung Cha; Chalmers tekniska högskola; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; cryogenic; stability; noise temperature; InP HEMT; LNA; MMIC;

    Sammanfattning : The InGaAs/InAlAs/InP high electron mobility transistor (InP HEMT) is the superior technology for the most demanding low-noise and high-speed microwave and millimeter-wave applications, in particular in radio astronomy and deep-space communication. InP HEMT has enabled cryogenic low noise amplifier (LNA) designs with noise temperatures about ten times the quantum noise limit from sub  GHz up to 120 GHz. LÄS MER

  7. 10. Ultra-Low Power InAs/AlSb HEMTs for Cryogenic Low-Noise Applications

    Författare :Giuseppe Moschetti; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; low noise; InAs AlSb; metamorphic; low power; high frequency; high electron mobility transistor HEMT ; cryogenic; ion implantation;

    Sammanfattning : The InAs/AlSb high electron mobility transistor (HEMT) is an emerging microwave device technology for ultra-low power and low noise applications. Due to the low bandgap (0. LÄS MER