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Visar resultat 16 - 20 av 25 avhandlingar innehållade ordet cigs.
16. Window Layer Structures for Chalcopyrite Thin-Film Solar Cells
Sammanfattning : This thesis aims to contribute to the development of improved window layer structures for chalcopyrite thin-film solar cells, with an emphasis on the buffer layer, to assist future reductions of the levelized cost of energy. This is realized by exploring the potential of existing materials and deposition processes, as well as developing new buffer layer processes based on atomic layer deposition (ALD). LÄS MER
17. Recycling of CIGS solar cells: environmentally friendly approaches for silver and indium recovery
Sammanfattning : The increase in electricity produced by solar energy is expected to create an end-of-life photovoltaics (PV) waste problem in the following decades, while their manufacturing waste is already a reality. However, their recycling is still at a primitive stage. LÄS MER
18. Atomic layer deposition of zinc tin oxide buffer layers for Cu(In,Ga)Se2 solar cells
Sammanfattning : The aim of this thesis is to provide an in-depth investigation of zinc tin oxide, Zn1-xSnxOy or ZTO, grown by atomic layer deposition (ALD) as a buffer layer in Cu(In,Ga)Se2 (CIGS) solar cells. The thesis analyzes how changes in the ALD process influence the material properties of ZTO, and how these in turn affect the performance of CIGS solar cells. LÄS MER
19. Band Gap Profiling and High Speed Deposition of Cu(In,Ga)Se2 for Thin Film Solar Cells
Sammanfattning : The Cu(In,Ga)Se2-based thin film solar cell is a promising candidate for becoming one of the more important solar cell technologies in the near future. In order to realize such a development a significant reduced production cost of the Cu(In,Ga)Se2 (CIGS) layer is needed. LÄS MER
20. On Generation and Recombination in Cu(In,Ga)Se2 Thin-Film Solar Cells
Sammanfattning : The solar cell technology based on Cu(In,Ga)Se2 (CIGS) thin-films provides a promising route to cost competitive solar electricity. The standard device structure is ZnO:Al/ZnO/CdS/CIGS/Mo films on a glass substrate, where the first three layers are n-type semiconductors with wide bandgaps, forming a pn-junction with the p-type CIGS absorber layer; the Mo layer serves as a back contact. LÄS MER