Sökning: "chemical vapor deposition"
Visar resultat 16 - 20 av 148 avhandlingar innehållade orden chemical vapor deposition.
16. A Study of Group 13-Nitride Atomic Layer Deposition : Computational Chemistry Modelling of Atomistic Deposition Processes
Sammanfattning : The crystalline solids aluminium nitride (AlN), gallium nitride (GaN) and indium nitride (InN), together with their alloys, are of huge interest in the semiconductor industry. Their bandgaps span an extensive range from 6.0 eV for AlN to 0.7 eV for InN, with GaN in between at a bandgap of 3. LÄS MER
17. Corrosion of Ferritic Stainless Steel Interconnects for Solid Oxide Cells – Challenging Operating Conditions
Sammanfattning : Solid oxide cells (SOC) have the potential to revolutionize electricity production by being able to both produce electricity with very high efficiency from a variety of fuels or to produce fuels from electricity and abundant raw materials such as water or carbon dioxide. Some material challenges remain to be solved before large-scale commercialization can be achieved. LÄS MER
18. Synthesis and Characterization of Carbon Based One-Dimensional Structures : Tuning Physical and Chemical Properties
Sammanfattning : Carbon nanostructures have been extensively used in different applications; ranging from electronic and optoelectronic devices to energy conversion. The interest stems from the fact that covalently bonded carbon atoms can form a wide variety of structures with zero-, one- and two-dimensional configuration with different physical properties. LÄS MER
19. Area Selective Chemical Vapor Deposition of Metallic Films using Plasma Electrons as Reducing Agents
Sammanfattning : Metallic films are used to improve optical, chemical, mechanical, magnetic, and electrical properties and are therefore of high importance in many applications, from electronics and catalysis, environmental protection and health, to wearable and flexible electronic materials. Many of these applications, however, require that the metal films are deposited uniformly on topographically complex surfaces and structures. LÄS MER
20. Epitaxy and characterization of SiGeC layers grown by reduced pressure chemical vapor deposition
Sammanfattning : Heteroepitaxial SiGeC layers have attracted immenseattention as a material for high frequency devices duringrecent years. The unique properties of integrating carbon inSiGe are the additional freedom for strain and bandgapengineering as well as allowing more aggressive device designdue to the potential for increased thermal budget duringprocessing. LÄS MER
