Sökning: "carrier recombination"
Visar resultat 1 - 5 av 66 avhandlingar innehållade orden carrier recombination.
1. Impact of carrier localization on recombination in InGaN quantum wells with nonbasal crystallographic orientations
Sammanfattning : The modern InGaN technology demonstrates high efficiencies only in the blue spectral region and low current operation modes. The growth of InGaN quantum wells (QWs) on nonbasal crystallographic planes (NBP) has potential to deliver high-power blue and green light emitting diodes and lasers. LÄS MER
2. Localization effects in ternary nitride semiconductors
Sammanfattning : InGaN based blue and near-ultraviolet light emitting diodes and laser diodes have been successfully commercialized for many applications such as general lighting, display backlighting and high density optical storage devices. Despite having a comparably high defect density, these devices are known for their efficient operation, which is attributed to localization in potential fluctuations preventing carriers from reaching the centers of nonradiative recombination. LÄS MER
3. Dynamics of Photogenerated Charge Carriers in III-V Bulk and Nanowire Semiconductors
Sammanfattning : As a solution to solving energy consumption and environment problems, photovoltaics has become one type of the promising devices to convert solar energy into electricity directly. In some special areas like in space, a kind of photovoltaics with lightweight and reliable properties is needed to supply power. LÄS MER
4. Fabrication and Characterization of Composite TiO2/Carbon Nanofilms with Enhanced Photocatalytic Activity
Sammanfattning : The work presented in this thesis is dedicated to fabrication and characterization of an efficient thin film photocatalyst for environmental cleaning and solar fuel applications. Because of its simplicity and reproducible fabrication, the chosen combination of nanometer thin titania and carbon films serves also as a model system for a wider class of photoactive materials. LÄS MER
5. Studies of Light Emitting Devices Based on Er-doped Si and SiGe Layered Structures
Sammanfattning : Doping with rare earth element erbium (Er) in Si has recently attracted a lot of research interest due to potential applications in Si-based opto-electronics. By using molecular beam epitaxy (MBE), precipitate-free Er-doping in Si has been made together with other co-dopants, e.g., oxygen (0) and fluorine (F), up to a level ∼1020 cm-3. LÄS MER