Sökning: "capacitor"
Visar resultat 6 - 10 av 142 avhandlingar innehållade ordet capacitor.
6. Novel RF MEMS Devices Enabled by Three-Dimensional Micromachining
Sammanfattning : This thesis presents novel radio frequency microelectromechanical (RF MEMS) circuits based on the three-dimensional (3-D) micromachined coplanar transmission lines whose geometry is re-configured by integrated microelectromechanical actuators. Two types of novel RF MEMS devices are proposed. LÄS MER
7. Synchronous Voltage Reversal Control of Thyristor Controlled Series Capacitor
Sammanfattning : Series compensation of transmission lines is an effectiveand cheap method of improving the power transmission systemperformance. Series capacitors virtually reduces the length ofthe line making it easier to keep all parts of the power systemrunning in synchronism and to maintain a constant voltage levelthroughout the system. LÄS MER
8. Selected Applications of Switched Capacitor Circuits : RF N-Path Filters and ΣΔ Modulators
Sammanfattning : Electronic circuits based on switches and capacitors have been used in various applications for several decades. The common switched capacitor (SC) circuits have made their career primarily in analog filters and data converters due to high immunity to capacitance mismatch in integrated circuit (IC) technologies. LÄS MER
9. Distance Protection of Transmission Lines with High Levels of Series Compensation : A study on frequency and time domain communication independent distance protection for series compensated lines
Sammanfattning : Series capacitors are used in electric transmission lines to increase their power transfer capacity. They compensate for the inductive reactance of the line. They offer a useful alternative to building new lines, in view of economic and environmental constraints. LÄS MER
10. Vertical III-V/High-k Nanowire MOS Capacitors and Transistors
Sammanfattning : The emerging nanowire technology in recent years has attracted an increasing interest for high-speed, low-power electronics due to the possibility of a gate-all-around (GAA) geometry enabling aggressive gate length scaling, together with the ease in incorporating high-mobility narrow band gap III-V semiconductors such as InAs on Si substrates. These benefits make vertical nanowire transistors an attractive alternative to the planar devices. LÄS MER